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BA-3E12UW 参数 Datasheet PDF下载

BA-3E12UW图片预览
型号: BA-3E12UW
PDF下载: 下载PDF文件 查看货源
内容描述: HI- EFF红筹股,这是对的GaP衬底制成的磷砷化镓 [hi-eff red chips, which are made from GaAsP on GaP substrate]
分类和应用:
文件页数/大小: 3 页 / 179 K
品牌: BRIGHT [ BRIGHT LED ELECTRONICS CORP ]
 浏览型号BA-3E12UW的Datasheet PDF文件第2页浏览型号BA-3E12UW的Datasheet PDF文件第3页  
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-3E12UW
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Features :
Emitting area : 18.78×5.85(mm)
Low power requirement.
Package Dimensions :
19.80(.780)
0.50(.020)
6.80(.268)
Excellent characters appearance.
Solid state reliability.
Categorized for luminous intensity.
2.54(.100)
6.40(.252)
3.00(.118) MIN.
0.5(.020)
12.70(.50)
2.20(.087)
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Description :
The BA-3E12UW had uniform
emitting light.
This product use hi-eff red chips,
which are made from GaAsP on
GaP substrate.
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This product have a white face and
white segments.
This product doesn't contain restriction
substance, comply ROHS standard.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
Internal Circuit Diagram :
½鴻工業股½有限公司
http://www.brtled.com
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