Ultra Low Power/High Speed CMOS SRAM
512K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BH616UV8011
FEATURES
Wide V
CC
low operation voltage : 1.65V ~ 3.6V
Ultra low power consumption :
Operation current : 12mA (Max.)at 55ns
V
CC
= 3.6V
2mA (Max.) at 1MHz
O
Standby current : 15uA (Max.) at 3.0V/85 C
O
Data retention current : 7uA (Max.) at 85 C
V
CC
= 1.2V
High speed access time :
-55/-70
55ns (Max.) at V
CC
=3V
70ns (Max.) at V
CC
=1.8V
Automatic power down when chip is deselected
Easy expansion with CE1, CE2 and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation, no clock, no refresh
Data retention supply voltage as low as 1.0V
DESCRIPTION
The BH616UV8011 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 524,288 by 16 bits and
operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum standby current of
O
15uA at 3.6V at 85 C and maximum access time of 55ns/70ns at
3V/1.8V .
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV8011 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH616UV8011 is available in DICE form, JEDEC standard
48-pin TSOP-I and 48-ball BGA package.
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BH616UV8011DI
BH616UV8011AI
BH616UV8011TI
Industrial
O
O
-40 C to +85 C
15uA
12uA
2mA
6mA
12mA
1.5mA
5mA
8mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=1.8V
10MHz
f
Max.
V
CC
=3.6V
V
CC
=1.8V
1MHz
V
CC
=3.6V
10MHz
f
Max.
1MHz
DICE
BGA-48-0608
TSOP I-48
PIN CONFIGURATIONS
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
CE2
NC
UB
LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
VSS
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
VSS
CE1
A0
BLOCK DIAGRAM
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
BH616UV8011TI
1024 x 8192
8192
DQ0
.
.
.
.
.
.
DQ15
CE2
CE1
WE
OE
UB
LB
V
CC
V
SS
.
.
.
.
.
.
16
16
Data
Input
Buffer
Data
Output
Buffer
16
512
Column Decoder
9
Address Input Buffer
Control
16
Column I/O
Write Driver
Sense Amp
1
A
B
C
D
E
F
G
H
LB
DQ8
DQ9
VSS
VCC
DQ14
DQ15
A18
2
OE
UB
DQ10
DQ11
DQ12
DQ13
NC
A8
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
DQ1
DQ3
DQ4
DQ5
WE
A11
6
CE2
DQ0
DQ2
VCC
VSS
DQ6
DQ7
NC
A18 A17 A15 A14 A13 A16 A2 A1 A0
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH616UV8011
1
Revision
1.2
Oct.
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
