Ultra Low Power/High Speed CMOS SRAM
512K X 8 bit
Green package materials are compliant to RoHS
BH62UV4000
n
FEATURES
Ÿ
Wide V
CC
low operation voltage : 1.65V ~ 3.6V
Ÿ
Ultra low power consumption :
V
CC
= 3.6V
Operation current : 10mA (Max.)at 55ns
2mA (Max.) at 1MHz
Standby current : 2.0uA (Typ.) at 3.0V/25
O
C
V
CC
= 1.2V
Data retention current : 1.0uA at 25
O
C
Ÿ
High speed access time :
-55
55ns (Max.) at V
CC
=1.65~3.6V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE and OE options
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation, no clock, no refresh
Ÿ
Data retention supply voltage as low as 1.0V
n
DESCRIPTION
The BH62UV4000 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 524,288 by 8 bits and
operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical operating current of
1.5mA at 1MHz at 3.6V/25
O
C and maximum access time of 55ns at
1.65V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BH62UV4000 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH62UV4000 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 400mil TSOP-II, 600mil Plastic DIP,
8mmx13.4mm STSOP, 8mmx20mm TSOP and 36-ball BGA
package.
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POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BH62UV4000DI
BH62UV4000EI
BH62UV4000HI
BH62UV4000PI
BH62UV4000SI
BH62UV4000STI
BH62UV4000TI
Industrial
-40
O
C to +85
O
C
10uA
10uA
2mA
6mA
10mA
1.5mA
5mA
8mA
OPERATING
TEMPERATURE
Icc STANDBY
(I
CCSB1
, Max)
Icc Operating
(I
CC
, Max)
PKG TYPE
V
CC
=1.8V
10MHz
f
Max.
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
1MHz
10MHz
f
Max.
1MHz
DICE
TSOP-II
BGA-36-0608
PDIP-32
SOP-32
STSOP-32
TSOP-32
n
PIN CONFIGURATIONS
n
BLOCK DIAGRAM
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
•
BH62UV4000STI
BH62UV4000TI
1
2
A1
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 4096
4096
3
NC
4
A3
5
A6
6
A8
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
BH62UV4000EI
8
BH62UV4000PI
9
BH62UV4000SI
10
11
12
13
14
15
16
•
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A
A0
B
DQ4
A2
WE
A4
A7
DQ0
C
DQ5
NC
A5
DQ1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
Buffer
8
8
Column I/O
Write Driver
Sense Amp
512
Column Decoder
9
8
Data
Output
Buffer
D
VSS
VCC
E
VCC
VSS
F
DQ6
A18
A17
DQ2
G
DQ7
OE
CE
A16
A15
DQ3
CE
WE
OE
V
CC
GND
Control
Address Input Buffer
A18 A16 A15 A14 A0 A17 A3 A2 A1
H
A9
A10
A11
A12
A13
A14
36-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH62UV4000
1
Revision 1.2
Aug.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
