Very Low Power CMOS SRAM
512K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616LV8017
n
FEATURES
Ÿ
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Ÿ
Very low power consumption :
V
CC
= 3.0V
Operation current : 31mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 0.8uA (Typ.) at 25
O
C
V
CC
= 5.0V
Operation current : 76mA (Max.) at 55ns
10mA (Max.) at 1MHz
Standby current : 3.5uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-55
55ns(Max.) at V
CC
=3.0~5.5V
-70
70ns(Max.) at V
CC
=2.7~5.5V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE and OE options
Ÿ
I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS616LV8017 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.8uA at 3.0V/25
O
C and maximum access time of 55ns at
3.0V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616LV8017 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV8017 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
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POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS616LV8017DC
BS616LV8017EC
BS616LV8017FI
BS616LV8017EI
BS616LV8017FI
Industrial
-40
O
C to +85
O
C
50uA
8.0uA
10mA
40mA
76mA
2mA
20mA
31mA
Commercial
+0
O
C to +70
O
C
25uA
4.0uA
9mA
39mA
75mA
1.5mA
19mA
30mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3.0V
10MHz
f
Max.
V
CC
=5.0V
V
CC
=3.0V
1MHz
V
CC
=5.0V
10MHz
f
Max.
1MHz
DICE
TSOP II-44
BGA-48-0912
TSOP II-44
BGA-48-0912
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PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
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BLOCK DIAGRAM
BS616LV8017EC
BS616LV8017EI
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 8192
8192
DQ0
.
.
.
.
.
.
DQ15
16
.
.
.
.
.
.
Data
Input
Buffer
16
512
Column Decoder
9
Address Input Buffer
16
Column I/O
Write Driver
Sense Amp
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
VCC
D14
D15
A18
2
OE
UB
D10
D11
D12
D13
NC
A8
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE
D1
D3
D4
D5
WE
A11
6
NC
D0
D2
VCC
VSS
D6
D7
NC
16
Data
Output
Buffer
CE
WE
OE
UB
LB
V
CC
V
SS
Control
A14 A15 A16 A17 A18 A0 A1 A2 A3
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS616LV8017
1
Revision 2.3
May.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
