Ultra Low Power CMOS SRAM
256K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616UV4016
n
FEATURES
Ÿ
Wide V
CC
low operation voltage :
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
Ÿ
Ultra low power consumption :
V
CC
= 2.0V
Operation current : 12mA (Max.) at 100ns
1mA (Max.) at 1MHz
Standby current : 0.1uA (Typ.) at 25
O
C
V
CC
= 3.0V
Operation current : 15mA (Max.) at 100ns
2mA (Max.) at 1MHz
Standby current : 0.25uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-10
100ns (Max.)
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE and OE options
Ÿ
I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation
Ÿ
Data retention supply voltage as low as 1.5V
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DESCRIPTION
The BS616UV4016 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 262,144 by 16 bits and
operates form a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.1uA at 2.0V/25
O
C and maximum access time of 100ns at
85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616UV4016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616UV4016 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
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POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS616UV4016DC
BS616UV4016AC
BS616UV4016EC
BS616UV4016AI
BS616UV4016EI
Industrial
-40
O
C to +85
O
C
4.0uA
2.0uA
2.0mA
15mA
1.0mA
12mA
Commercial
+0
O
C to +70
O
C
2.0uA
1.0uA
1.5mA
13mA
0.8mA
10mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=2.0V
f
Max.
V
CC
=3.0V
V
CC
=2.0V
V
CC
=3.0V
1MHz
f
Max.
1MHz
DICE
BGA-48-0608
TSOP II-44
BGA-48-0608
TSOP II-44
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PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
VCC
D14
D15
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
6
NC
D0
D2
VCC
VSS
D6
D7
NC
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
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BLOCK DIAGRAM
A12
A11
A10
A9
A8
A5
A6
A7
A4
A3
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
BS616UV4016EC
BS616UV4016EI
1024 x 4096
4096
DQ0
.
.
.
.
.
.
DQ15
16
.
.
.
.
.
.
Data
Input
Buffer
16
256
Column Decoder
8
Control
Address Input Buffer
16
Column I/O
Write Driver
Sense Amp
2
OE
UB
D10
D11
D12
D13
NC
A8
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE
D1
D3
D4
D5
WE
A11
16
Data
Output
Buffer
CE
WE
OE
UB
LB
V
CC
V
SS
A13 A14 A15 A16 A17 A0 A1 A2
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to modify document contents without notice.
R0201-BS616UV4016
1
Revision 1.6
May.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
