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BS616LV2017EC-55 参数 Datasheet PDF下载

BS616LV2017EC-55图片预览
型号: BS616LV2017EC-55
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 128K ×16位 [Very Low Power/Voltage CMOS SRAM 128K X 16 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 262 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
BS616LV2017
t
RC
ADDRESS
t
D
OUT
t
OH
AA
t
OH
READ CYCLE2
(1,3,4)
CE
t
ACS
t
BA
LB,UB
t
BE
D
OUT
t
(5)
CLZ
t
BDO
t
CHZ
(5)
READ CYCLE3
(1,4)
t
RC
ADDRESS
t
OE
AA
t
OE
CE
t
OH
t
OLZ
t
(5)
CLZ
t
ACS
t
OHZ
(5)
(1,5)
t
CHZ
t
BA
LB,UB
t
BE
D
OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = V
IL
.
3. Address valid prior to or coincident with CE transition low.
4. OE = V
IL
.
5. The parameter is guaranteed but not 100% tested.
t
BDO
R0201-BS616LV2017
5
Revision 1.1
Jan.
2004