BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
512K X 16 bit
(Single CE Pin)
BS616LV8017
• Wide Vcc operation voltage : 2.4~5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 30mA (@55ns) operating current
I -grade: 31mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
1.5uA (Typ.)
CMOS standby current
Vcc = 5.0V C-grade: 75mA (@55ns) operating current
I -grade: 76mA (@55ns) operating current
C-grade: 60mA (@70ns) operating current
I -grade: 61mA (@70ns) operating current
8.0uA (Typ.)
CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
DESCRIPTION
The BS616LV8017 is a high performance, very low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of
1.5uA
at 3V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV8017 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV8017 is available in 48B BGA and 44L TSOP2 packages.
PRODUCT FAMILY
PRODUCT
FAMILY
BS616LV8017EC
BS616LV8017FC
BS616LV8017EI
BS616LV8017FI
OPERATING
TEMPERATURE
+0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
RANGE
2.4V ~ 5.5V
2.4V ~ 5.5V
SPEED
( ns )
55ns : 3.0~5.5V
70ns : 2.7~5.5V
( I
CCSB1
, Max )
POWER DISSIPATION
STANDBY
Operating
( I
CC
, Max )
PKG TYPE
TSOP2-44
BGA-48-0912
TSOP2-44
BGA-48-0912
Vcc=3V
Vcc=5V
Vcc=3V
70ns
Vcc=5V
70ns
55 / 70
55 / 70
5uA
10uA
55uA
110uA
24mA
25mA
60mA
61mA
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
BLOCK DIAGRAM
A4
A3
A2
A1
A0
A17
A16
A15
A14
A13
A12
Address
Input
Buffer
22
Row
Decoder
2048
Memory Array
2048 x 4096
BS616LV8017EC
BS616LV8017EI
4096
D0
16
Data
Input
Buffer
16
Column I/O
1
2
OE
UB
D10
D11
D12
D13
NC
.
A8
3
A0
A3
A5
A17
VSS
A 14
A12
A9
4
A1
A4
A6
A7
A16
A 15
A 13
A 10
5
A2
CE
D1
D3
D4
D5
WE
A 11
6
NC
D0
D2
V CC
V SS
D6
D7
NC
A
B
C
D
E
F
G
H
LB
D8
D9
V SS
V CC
D14
D15
A 18
.
.
.
.
D15
.
.
.
.
Write Driver
Sense Amp
256
Column Decoder
16
Data
Output
16
Buffer
CE
WE
OE
UB
LB
Vcc
Vss
Control
16
Address Input Buffer
A11 A10 A9 A8 A7 A6 A5 A18
48-Ball CSP top View
Brilliance Semiconductor, Inc
. reserves the right to modify document contents without notice.
R0201-BS616LV8017
1
Revision 2.1
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
