BSI
BS616LV8017
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
(1)
UNITS
V
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
0.8
NAME
Vcc=3.0V
Vcc=5.0V
Guaranteed Input Low
Voltage(3)
IL
V
-0.5
--
Vcc=3.0V
Vcc=5.0V
2.0
2.2
Guaranteed Input High
Voltage(3)
Vcc+0.
3
IH
V
--
--
--
V
1
1
IN
IL
I
Input Leakage Current Vcc = Max, V = 0V to Vcc
--
--
--
uA
IH
IH
,
,
Vcc = Max, CE = V or OE = V
Output Leakage Current
LO
I
uA
V
I/O
V
= 0V to Vcc
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
0.4
--
OL
OL
V
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2mA
--
--
OH
OH
V
Vcc = Min, I = -1mA
2.4
V
(4)
70ns
70ns
25
61
1
--
--
--
--
--
--
--
Operating Power Supply
Current
DQ= 0mA
IL
CE = V ,I
CC
I
mA
mA
,F = Fmax(2)
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
--
Standby Current TTL
-
IH
DQ
CCSB
I
CE = V ,I = 0mA
2
--
(5)
CCSB1
10
1.5
CE
IN
V
Vcc -0.2V,
Vcc- 0.2V or V
≧
Standby Current CMOS
-
I
uA
0.2V
≦
IN
≧
Vcc=5.0V
110
--
8.0
1. Typical characteristics are at TA = 25oC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 31mA(@3.0V) / 76mA(@5.0V) under 55ns operation.
5.IccsB1 is 5uA/55uA at Vcc=3.0V/5.0V and TA=70oC.
2. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
CE ≧ Vcc - 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE ≧ Vcc - 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(3)
ICCDR
Data Retention Current
--
0
0.8
2.5
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
3. IccDR(Max.) is 1.3uA at TA=70OC.
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Data Retention Mode
DR ≥ 1.5V
V
Vcc
Vcc
Vcc
CE
t
R
t
CDR
≥
CE
Vcc - 0.2V
VIH
VIH
Revision 2.1
R0201-BS616LV8017
3
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
