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BS616LV8018FC-70 参数 Datasheet PDF下载

BS616LV8018FC-70图片预览
型号: BS616LV8018FC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 512K ×16位 [Very Low Power/Voltage CMOS SRAM 512K X 16 bit]
分类和应用: 静态存储器
文件页数/大小: 8 页 / 255 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
PIN DESCRIPTIONS
BS616LV8018
Function
These 19 address inputs select one of the 524,288 x 16-bit words in the RAM.
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
Lower byte and upper byte data input/output control pins.
These 16 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
Name
A0-A18 Address Input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input
D0 - D15 Data Input/Output Ports
Vcc
Vss
TRUTH TABLE
MODE
Not selected
(Power Down)
Output Disabled
Read
CE1
H
X
L
L
CE2
X
L
H
H
WE
X
X
H
H
OE
X
X
H
L
LB
X
X
X
L
H
L
L
Write
L
H
L
X
H
L
UB
X
X
X
L
L
H
L
L
H
D0~D7
High Z
High Z
High Z
Dout
High Z
Dout
Din
X
Din
D8~D15
High Z
High Z
High Z
Dout
Dout
High Z
Din
Din
X
Vcc CURRENT
I
CCSB
, I
CCSB1
I
CCSB
, I
CCSB1
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
PARAMETER
Terminal Voltage
Respect to GND
with
OPERATING RANGE
UNITS
V
O
O
RATING
-0.5 to
Vcc+0.5
-40 to +85
-60 to +150
1.0
20
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
4.5V ~ 5.5V
4.5V ~ 5.5V
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
C
C
W
mA
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
SYMBOL
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
C
IN
V
IN
=0V
10
pF
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
C
DQ
V
I/O
=0V
12
pF
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
1. This parameter is guaranteed and not 100% tested.
maximum rating conditions for extended periods may affect reliability.
R0201-BS616LV8018
2
Revision 2.1
Jan.
2004