BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
256K X 16 bit
BS616LV4016
• Wide Vcc operation voltage :
2.4V
~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 25mA (@55ns) operating current
I -grade: 27mA (@55ns) operating current
C-grade: 17mA (@70ns) operating current
I -grade: 18mA (@70ns) operating current
0.45uA (Typ.)
CMOS standby current
• High speed access time :
-55
55ns (Max.) at Vcc = 2.7~3.6V / 85
o
C
-70
70ns (Max.) at Vcc = 2.4~3.6V / 85
o
C
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as
1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
DESCRIPTION
The BS616LV4016 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates from a wide range of
2.4V
to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.45uA
at
3.0V/25
o
C
and maximum access time of
55ns
at
2.7V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV4016 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4016 is available in DICE form , JEDEC standard 44-pin
TSOP Type II package and 48-ball BGA package.
PRODUCT FAMILY
PRODUCT FAMILY
BS616LV4016DC
BS616LV4016EC
BS616LV4016AC
BS616LV4016DI
BS616LV4016EI
BS616LV4016AI
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
(
ns )
55ns:
2.7~3.6V
70ns:
2.4~3.6V
( I
CCSB1
, Max )
POWER DISSIPATION
Operating
STANDBY
( I
CC
, Max )
PKG
TYPE
DICE
Vcc = 3.0V
Vcc = 3.0V
55ns
70ns
+0 C to +70 C
O
O
2.4V
~ 3.6V
55 / 70
6.0uA
25mA
17mA
-40 C to +85 C
O
O
2.4V
~ 3.6V
55 / 70
8.0uA
27mA
18mA
TSOP2-44
BGA-48-0608
DICE
TSOP2-44
BGA-48-0608
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
BLOCK DIAGRAM
A4
A3
A2
A1
A0
A17
A16
A15
A14
A13
A12
Address
Input
Buffer
22
Row
Decoder
2048
Memory Array
2048 x 2048
BS616LV4016EC
BS616LV4016EI
2048
DQ0
16
Data
Input
Buffer
16
Column I/O
.
.
.
.
DQ15
.
.
.
.
Write Driver
Sense Amp
128
Column Decoder
16
Data
Output
16
Buffer
CE
WE
OE
UB
LB
Vcc
Gnd
Control
14
Address Input Buffer
A11 A10 A9 A8 A7 A6 A5
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
R0201-BS616LV4016
1
Revision 1.1
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
