Very Low Power CMOS SRAM
512K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616LV8016
FEATURES
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Very low power consumption :
Operation current : 31mA (Max.) at 55ns
V
CC
= 3.0V
2mA (Max.) at 1MHz
O
Standby current : 4/8uA (Max.) at 70/85 C
Operation current : 76mA (Max.) at 55ns
V
CC
= 5.0V
10mA (Max.) at 1MHz
O
Standby current : 25/50uA (Max.) at 70/85 C
High speed access time :
-55
55ns(Max.) at V
CC
=3.0~5.5V
-70
70ns(Max.) at V
CC
=2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE2, CE1 and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation, no clock, no refresh
Data retention supply voltage as low as 1.5V
DESCRIPTION
The BS616LV8016 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
current of 8/50uA at Vcc=3/5V at 85 C and maximum access time of
55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS616LV8016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV8016 is available in DICE form and 48-ball BGA
package.
O
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS616LV8016DC
BS616LV8016FC
BS616LV8016FI
OPERATING
TEMPERATURE
Commercial
O
O
+0 C to +70 C
Industrial
O
O
-40 C to +85 C
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3.0V
10MHz
f
Max.
V
CC
=5.0V
V
CC
=3.0V
1MHz
V
CC
=5.0V
10MHz
f
Max.
1MHz
25uA
4.0uA
9mA
39mA
75mA
1.5mA
19mA
30mA
DICE
BGA-48-0912
BGA-48-0912
50uA
8.0uA
10mA
40mA
76mA
2mA
20mA
31mA
PIN CONFIGURATIONS
1
A
B
C
D
E
F
G
H
LB
DQ8
DQ9
VSS
VCC
DQ14
DQ15
A18
2
OE
UB
DQ10
DQ11
DQ12
DQ13
NC
A8
3
A0
A3
A5
A17
VSS
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
DQ1
DQ3
DQ4
DQ5
WE
A11
6
CE2
DQ0
DQ2
VCC
VSS
DQ6
DQ7
NC
BLOCK DIAGRAM
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 8192
8192
DQ0
.
.
.
.
.
.
DQ15
CE2
CE1
WE
OE
UB
LB
V
CC
V
SS
.
.
.
.
.
.
16
16
Data
Input
Buffer
Data
Output
Buffer
16
512
Column Decoder
9
Address Input Buffer
Control
16
Column I/O
Write Driver
Sense Amp
A14 A15 A16 A17 A18 A0 A1 A2 A3
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS616LV8016
1
Revision
2.4
Oct.
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
