Very Low Power CMOS SRAM
1M X 16 bit
Green package materials are compliant to RoHS
BS616LV1611
FEATURES
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Very low power consumption :
Operation current : 46mA (Max.) at 55ns
V
CC
= 3.0V
2mA (Max.) at 1MHz
O
Standby current :
16uA (Max.) at 85 C
Operation current : 115mA (Max.) at 55ns
V
CC
= 5.0V
10mA (Max.) at 1MHz
O
Standby current :
100uA (Max.) at 85 C
High speed access time :
-55
55ns(Max.) at V
CC
=3.0~5.5V
-70
70ns(Max.) at V
CC
=2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE2, CE1 and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation, no clock, no refresh
Data retention supply voltage as low as 1.5V
DESCRIPTION
The BS616LV1611 is a high performance, very low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
current of 16/100uA at Vcc=3/5V at 85 C and maximum access time
of 55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS616LV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV1611 is available in 48-pin TSOP Type I package and
48-ball BGA package.
O
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3.0V
10MHz
f
Max.
V
CC
=5.0V
V
CC
=3.0V
1MHz
V
CC
=5.0V
10MHz
f
Max.
1MHz
BS616LV1611FI
Industrial
O
O
-40 C to +85 C
BS616LV1611TI
100uA
16uA
10mA
50mA
115mA
2mA
20mA
46mA
BGA-48-0912
TSOP I-48
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE1
DQ0
DQ1
DQ2
DQ3
VCC
NC
VSS
DQ4
DQ5
DQ6
DQ7
A19
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
VCC
D14
D15
A18
2
OE
UB
D10
D11
D12
D13
A19
A8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
6
CE2
D0
D2
VCC
VSS
D6
D7
NC
A5
A6
A7
OE
UB
LB
CE2
NC
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
BLOCK DIAGRAM
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
BS616LV1611TC
BS616LV1611TI
1024 x 16384
16384
DQ0
.
.
.
.
.
.
DQ15
CE2
CE1
WE
OE
UB
LB
V
CC
V
SS
.
.
.
.
.
.
16
16
Data
Input
Buffer
Data
Output
Buffer
16
1024
Column Decoder
10
Address Input Buffer
Control
16
Column I/O
Write Driver
Sense Amp
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
D1
D3
D4
D5
WE
A11
A14 A15 A16 A17 A18 A0 A1 A2 A3 A19
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS616LV1611
1
Revision
2.4
Oct.
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
