欢迎访问ic37.com |
会员登录 免费注册
发布采购

BS62LV1027TC-55 参数 Datasheet PDF下载

BS62LV1027TC-55图片预览
型号: BS62LV1027TC-55
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM [Very Low Power/Voltage CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 428 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
 浏览型号BS62LV1027TC-55的Datasheet PDF文件第2页浏览型号BS62LV1027TC-55的Datasheet PDF文件第3页浏览型号BS62LV1027TC-55的Datasheet PDF文件第4页浏览型号BS62LV1027TC-55的Datasheet PDF文件第5页浏览型号BS62LV1027TC-55的Datasheet PDF文件第6页浏览型号BS62LV1027TC-55的Datasheet PDF文件第7页浏览型号BS62LV1027TC-55的Datasheet PDF文件第8页浏览型号BS62LV1027TC-55的Datasheet PDF文件第9页  
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
BS62LV1027
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade : 17mA (@55ns) operating current
I- grade : 18mA (@55ns) operating current
C-grade : 14mA (@70ns) operating current
I- grade : 15mA (@70ns) operating current
0.1uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 46mA (55ns) operating current
I- grade : 47mA (55ns) operating current
C-grade : 38mA (70ns) operating current
I- grade : 39mA (70ns) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Easy expansion with CE2, CE1, and OE options
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
DESCRIPTION
The BS62LV1027 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.1uA at 3V/25
o
C and maximum access time of 55ns at 3V/85
o
C.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1027 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1027 is available in DICE form , JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP,8mm x13.4
mm STSOP and 8mmx20mm TSOP.
SPEED
(ns)
POWER DISSIPATION
Operating
STANDBY
(I
CCSB1
, Max)
(I
CC
, Max)
PRODUCT FAMILY
PRODUCT
FAMILY
BS62LV1027SC
BS62LV1027TC
BS62LV1027STC
BS62LV1027PC
BS62LV1027JC
BS62LV1027DC
BS62LV1027SI
BS62LV1027TI
BS62LV1027STI
BS62LV1027PI
BS62LV1027JI
BS62LV1027DI
OPERATING
TEMPERATURE
Vcc
RANGE
55ns : 3.0~5.5V
70ns : 2.7~5.5V Vcc=5.0V Vcc=3.0V
PKG TYPE
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
Vcc=3V
70ns
Vcc=5V
70ns
+0 C to +70 C
O
O
2.4V ~ 5.5V
55/70
8.0uA
1.3uA
14mA
38mA
-40 C to +85 C
O
O
2.4V ~ 5.5V
55/70
20uA
2.5uA
15mA
39mA
PIN CONFIGURATIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
BS62LV1027SC
26
BS62LV1027SI
25
BS62LV1027PC
24
BS62LV1027PI
23
BS62LV1027JC
22
BS62LV1027JI
21
20
19
18
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
BLOCK DIAGRAM
A6
A7
A12
A14
A16
A15
A13
A8
A9
A11
Address
Input
Buffer
20
Row
Decoder
1024
Memory Array
1024 x 1024
1024
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
Buffer
8
Column I/O
Write Driver
Sense Amp
128
Column Decoder
14
Control
Address Input Buffer
8
Data
Output
Buffer
8
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
R0201-BS62LV1027
BS62LV1027TC
BS62LV1027STC
BS62LV1027TI
BS62LV1027STI
CE2
CE1
WE
OE
Vdd
Gnd
A5 A4 A3 A2 A1 A0 A10
1
Revision 2.1
Jan.
2004