BS62LV1027
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
CYCLE TIME : 55ns CYCLE TIME : 70ns
(VCC = 3.0~5.5V) (VCC = 2.7~5.5V)
MIN. TYP. MAX. MIN. TYP. MAX.
JEDEC
PARAMETER
NAME
PARAMETER
DESCRIPTION
UNITS
NAME
Write Cycle Time
55
55
0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
70
70
0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAVAX
tE1LWH
tAVWL
tAVWH
tWLWH
tWHAX
tE2LAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
tCW
tAS
Chip Select to End of Write
Address Set up Time
--
--
Address Valid to End of Write
Write Pulse Width
55
30
0
--
70
35
0
--
tAW
--
--
tWP
Write Recovery Time
(CE1, WE)
(CE2)
--
--
tWR1
tWR2
tWHZ
tDW
tDH
Write Recovery Time
0
--
0
--
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
--
25
--
--
30
--
25
0
30
0
--
--
Output Disable to Output in High Z
End of Write to Output Active
--
25
--
--
30
--
tOHZ
tOW
5
5
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
(3)
tWR1
(11)
tCW
(5)
(5)
CE1
CE2
(11)
(2)
tCW
(3)
tWR2
tAW
tWP
WE
tAS
(4,10)
tOHZ
DOUT
tDH
tDW
DIN
Revision 2.3
May. 2006
R0201-BS62LV1027
6
BSI [ BRILLIANCE SEMICONDUCTOR ]
