BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
DESCRIPTION
BS62LV1029
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade : 46mA (@55ns) operating current
I- grade : 47mA (@55ns) operating current
C-grade : 38mA (@70ns) operating current
I- grade : 39mA (@70ns) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
The BS62LV1029 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.6uA at 5V/25
o
C and maximum access time of 55ns at 5V/85
o
C.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1029 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1029 is available in DICE form , JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.
PRODUCT FAMILY
PRODUCT
FAMILY
BS62LV1029SC
BS62LV1029TC
BS62LV1029STC
BS62LV1029PC
BS62LV1029JC
BS62LV1029DC
BS62LV1029SI
BS62LV1029TI
BS62LV1029STI
BS62LV1029PI
BS62LV1029JI
BS62LV1029DI
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
(ns)
55ns :4.5~5.5V
70ns :4.5~5.5V
POWER DISSIPATION
STANDBY
Operating
(I
CCSB1
, Max)
(I
CC
, Max)
55ns
PKG TYPE
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
Vcc=5.0V
Vcc= 5.0V
70ns
+0 C to +70 C
O
O
4.5V ~ 5.5V
55/70
8.0uA
46mA
38mA
-40 C to +85 C
O
O
4.5V~ 5.5V
55/70
20uA
47mA
39mA
PIN CONFIGURATIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
BS62LV1029SC
26
BS62LV1029SI
25
BS62LV1029PC
24
BS62LV1029PI
23
BS62LV1029JC
22
BS62LV1029JI
21
20
19
18
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BLOCK DIAGRAM
A6
A7
A12
A14
A16
A15
A13
A8
A9
A11
•
Address
Input
Buffer
20
Row
Decoder
1024
Memory Array
1024 x 1024
1024
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
Buffer
8
Column I/O
Write Driver
Sense Amp
128
Column Decoder
14
Control
Address Input Buffer
8
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
BS62LV1029TC
BS62LV1029STC
BS62LV1029TI
BS62LV1029STI
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
Data
Output
Buffer
8
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
R0201-BS62LV1029
•
CE2
CE1
WE
OE
Vdd
Gnd
A5 A4 A3 A2 A1 A0 A10
1
Revision 1.1
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
