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BS62LV2006STI-55 参数 Datasheet PDF下载

BS62LV2006STI-55图片预览
型号: BS62LV2006STI-55
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 256K ×8位 [Very Low Power/Voltage CMOS SRAM 256K X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 322 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
DC ELECTRICAL CHARACTERISTICS
( TA = -40
o
C to + 85
o
C )
PARAMETER
NAME
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
(5)
I
CCSB
BS62LV2006
TEST CONDITIONS
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
PARAMETER
Guaranteed Input Low
Voltage
(3)
Guaranteed Input High
Voltage
(3)
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
MIN. TYP.
(1)
MAX.
-0.5
2.0
2.2
--
--
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
UNITS
V
V
uA
uA
V
V
mA
mA
--
--
--
--
--
--
--
--
--
--
--
0.3
1.0
0.8
V
cc+
0.3
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE1 = V
IH
or CE2=V
IL
or OE = V
IH
, V
I/O
= 0V to Vcc
Vcc = Max, I
OL
= 2.0mA
Vcc = Min, I
OH
= -1.0mA
Vcc=Max,CE1=V
IL
, CE2=V
IH
I
DQ
= 0mA, F = Fmax
(2)
Vcc = Max, CE1 = V
IH
or CE2=V
IL
I
DQ
= 0mA
Vcc = Max, CE1≧Vcc-0.2V or
CE2≦0.2V ;V
IN
Vcc - 0.2V or
V
IN
≦0.2V
70ns
70ns
1
1
0.4
--
18
45
0.5
1.0
5
30
--
2.4
--
--
--
--
--
--
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
I
CCSB1
(4)
Standby Current-CMOS
Vcc=5.0V
uA
1. Typical characteristics are at TA = 25
o
C.
2. Fmax = 1/t
RC
.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
5. Icc_
MAX.
is 23mA(@3V) / 55mA(@5V) under 55ns operation.
4. I
ccs
B1_MAX.
is 3uA / 10uA at Vcc=3V / 5V and T
A
=70
o
C.
DATA RETENTION CHARACTERISTICS
( TA = -40
o
C to + 85
o
C )
SYMBOL
V
DR
I
CCDR
(3)
PARAMETER
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
TEST CONDITIONS
CE1
Vcc - 0.2V or CE2
0.2V,
V
IN
Vcc - 0.2V or V
IN
0.2V
CE1
Vcc - 0.2V or CE2
0.2V,
V
IN
Vcc - 0.2V or V
IN
0.2V
See Retention Waveform
MIN.
1.5
--
0
T
RC (2)
TYP.
(1)
--
0.1
--
--
MAX.
--
1.0
--
--
UNITS
V
uA
ns
ns
t
CDR
t
R
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
3. I
cc
DR_MAX.
is 0.7uA at T
A
=70
o
C.
LOW V
CC
DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
Data Retention Mode
V
DR
1.5V
Vcc
V
IH
Vcc
Vcc
t
CDR
CE1
Vcc - 0.2V
t
R
V
IH
CE1
LOW V
CC
DATA RETENTION WAVEFORM (2)
( CE2 Controlled )
Data Retention Mode
Vcc
Vcc
V
DR
1.5V
Vcc
t
CDR
t
R
CE2
0.2V
CE2
R0201-BS62LV2006
V
IL
V
IL
3
Revision 1.1
Jan.
2004