BS62LV256
n
AC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +85 C)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
CYCLE TIME : 55ns
(V
CC
= 4.5~5.5V)
MIN.
Write Cycle Time
Address Valid to End of Write
Chip Select to End of Write
Write Pulse Width
Address Set up Time
Write Recovery Time
Write to Output High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
(CE, WE)
55
55
55
35
0
0
--
35
0
--
5
TYP.
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
--
--
--
--
--
25
--
--
25
--
CYCLE TIME : 70ns
(V
CC
= 3.0~5.5V)
MIN.
70
70
70
40
0
0
--
40
0
--
5
TYP.
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
--
--
--
--
--
30
--
--
30
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
O
O
DESCRIPTION
UNITS
t
AVAX
t
AVWH
t
E1LWH
t
WLWH
t
AVWL
t
WHAX
t
WLQZ
t
DVWH
t
WHDX
t
GHQZ
t
WHQX
t
WC
t
AW
t
CW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
n
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
t
WC
ADDRESS
t
WR
OE
t
CW
CE
(5)
(11)
(3)
t
AW
WE
t
AS
t
OHZ
D
OUT
t
DH
t
DW
D
IN
(4,10)
t
WP
(2)
R0201-BS62LV256
6
Revision 2.6
Sep.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
