BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
512K X 8 bit
BS62LV4006
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 29mA (@55ns) operating current
I -grade: 30mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
0.45uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 68mA (@55ns) operating current
I -grade: 70mA (@55ns) operating current
C-grade: 58mA (@70ns) operating current
I -grade: 60mA (@70ns) operating current
2.0uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• Three state outputs and TTL compatible
DESCRIPTION
The BS62LV4006 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.45uA at
3.0V/25
o
C
and maximum access time of 55ns at
3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) , and active LOW output enable (OE) and three-state output
drivers.
The BS62LV4006 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV4006 is available in the JEDEC standard 32L SOP, TSOP
, PDIP, TSOP II and STSOP package.
PRODUCT FAMILY
PRODUCT
FAMILY
BS62LV4006TC
BS62LV4006STC
BS62LV4006SC
BS62LV4006EC
BS62LV4006PC
BS62LV4006TI
BS62LV4006STI
BS62LV4006SI
BS62LV4006EI
BS62LV4006PI
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
( ns )
55ns :3.0~5.5V
70ns :2.7~5.5V
POWER DISSIPATION
( I
CCSB1
, Max )
STANDBY
Vcc =5.0V
Operating
( I
CC
, Max )
Vcc = 3.0V
Vcc = 3.0V
70ns
Vcc =5.0V
70ns
PKG
TYPE
TSOP
-
32
STSOP
-
32
SOP
-
32
TSOP2
-
32
PDIP
-
32
TSOP
-
32
STSOP
-
32
SOP
-
32
TSOP2
-
32
PDIP
-
32
+0 C to +70 C
O
O
2.4V ~ 5.5V
55 / 70
5uA
30uA
24mA
58mA
-
40
O
C to +85 C
O
2.4V ~ 5.5V
55 / 70
10uA
60uA
25mA
60mA
PIN CONFIGURATIONS
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
BLOCK DIAGRAM
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
•
BS62LV4006SC
BS62LV4006SI
BS62LV4006EC
BS62LV4006EI
BS62LV4006PC
BS62LV4006PI
Address
Input
Buffer
22
Row
Decoder
2048
Memory Array
2048 X 2048
2048
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
Buffer
8
Column I/O
Write Driver
Sense Amp
256
Column Decoder
16
CE
WE
OE
Vdd
GND
Control
Address Input Buffer
8
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
BS62LV4006TC
BS62LV4006STC
BS62LV4006TI
BS62LV4006STI
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
Data
Output
Buffer
8
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
R0201-BS62LV4006
•
A11 A9 A8 A3 A2 A1 A0 A10
1
Revision 1.1
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
