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BS62LV4006ECG70 参数 Datasheet PDF下载

BS62LV4006ECG70图片预览
型号: BS62LV4006ECG70
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗CMOS SRAM 512K ×8位 [Very Low Power CMOS SRAM 512K X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 400 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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Very Low Power CMOS SRAM
512K X 8 bit
Pb-Free and Green package materials are compliant to RoHS
BS62LV4006
n
FEATURES
Ÿ
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Ÿ
Very low power consumption :
V
CC
= 3.0V
Operation current : 30mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 0.25uA (Typ.) at 25
O
C
V
CC
= 5.0V
Operation current : 70mA (Max.) at 55ns
10mA (Max.) at 1MHz
Standby current : 1.5uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-55
55ns (Max.) at V
CC
=3.0~5.5V
-70
70ns (Max.) at V
CC
=2.7~5.5V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE and OE options
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS62LV4006 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.25uA at 3.0V/25
O
C and maximum access time of 55ns at
3.0V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62LV4006 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV4006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 600mil Plastic DIP, 400 mil TSOP II,
8mmx13.4mm STSOP and 8mmx20mm TSOP package.
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS62LV4006DC
BS62LV4006EC
BS62LV4006HC
BS62LV4006PC
BS62LV4006SC
BS62LV4006STC
BS62LV4006TC
BS62LV4006EI
BS62LV4006HI
BS62LV4006PI
BS62LV4006SI
BS62LV4006STI
BS62LV4006TI
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3V
10MHz
f
Max.
V
CC
=5.0V
V
CC
=3.0V
1MHz
V
CC
=5V
10MHz
f
Max.
1MHz
Commercial
+0
O
C to +70
O
C
10uA
2.0uA
9mA
43mA
68mA
1.5mA
18mA
29mA
Industrial
-40
O
C to +85
O
C
20uA
4.0uA
10mA
45mA
70mA
2mA
20mA
30mA
DICE
TSOP II-32
BGA-36-0608
PDIP-32
SOP-32
STSOP-32
TSOP-32
TSOP II-32
BGA-36-0608
PDIP-32
SOP-32
STSOP-32
TSOP-32
n
PIN CONFIGURATIONS
n
BLOCK DIAGRAM
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A12
A14
A16
A18
A15
A17
A13
A8
A9
A11
BS62LV4006TC
BS62LV4006TI
BS62LV4006STC
BS62LV4006STI
1
2
A1
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 4096
4096
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
Buffer
8
256
Column Decoder
9
8
Column I/O
Write Driver
Sense Amp
3
NC
4
A3
5
A6
6
A8
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
BS62LV4006EC
BS62LV4006EI
BS62LV4006SC
BS62LV4006SI
BS62LV4006PC
BS62LV4006PI
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A
A0
8
B
DQ4
A2
WE
A4
A7
DQ0
Data
Output
Buffer
C
DQ5
NC
A5
DQ1
D
VSS
VCC
CE
WE
Control
Address Input Buffer
E
VCC
VSS
OE
V
CC
GND
A7 A6 A5 A4 A3 A2 A1 A0 A0
F
DQ6
A18
A17
DQ2
G
DQ7
OE
CE
A16
A15
DQ3
H
A9
A10
A11
A12
A13
A14
36-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS62LV4006
1
Revision 1.4
May.
2006