BSI
BS62LV4007
DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
(1)
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP.
MAX.
NAME
Guaranteed Input Low
Voltage
Vcc = 5.0 V
Vcc = 5.0 V
VIL
-0.5
--
0.8
V
(3)
Guaranteed Input High
IH
V
2.2
--
--
--
Vcc+0.3
1
V
(3)
Voltage
IL
IN
I
Input Leakage Current
Vcc = Max, V = 0V to Vcc
uA
IH
IH
Vcc = Max, CE = V , or OE = V ,
ILO
Output Leakage Current
--
--
--
--
--
1
uA
V
I/O = 0V to Vcc
Vcc = 5.0 V
Vcc = 5.0 V
0.4
--
OL
OL
V
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2.0mA
V
V
OH
V
OH
= -1.0mA
Vcc = Min, I
2.4
(5)
55ns
70ns
70
60
IL
DQ
CE = V , I = 0mA,
F=Fmax(2)
CC
I
Operating Power Supply
Current
--
--
--
--
--
mA
mA
uA
Vcc = 5.0 V
CCSB
IH
DQ
I
CE = V , I = 0mA
Vcc = 5.0 V
Vcc = 5.0 V
1.0
60
Standby Current-TTL
(4)
CE
Vcc-0.2V,
≧
≧
Standby Current-CMOS
ICCSB1
2.0
IN
IN
V
Vcc - 0.2V or V
0.2V
≦
1. Typical characteristics are at TA = 25oC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. IccSB1_MAX. is 30uA at Vcc=5.0V and TA=70oC. 5. Icc_MAX. is 68mA(@55ns) / 58mA(@70ns) at Vcc=5.0V and TA=0~70oC.
2. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
ICCDR
Data Retention Current
--
0
0.3
1.3
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.8uA at TA=70OC.
LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Data Retention Mode
DR ≥ 1.5V
V
Vcc
Vcc
Vcc
CE
t
R
t
CDR
≥
CE Vcc - 0.2V
VIH
VIH
Revision 1.1
R0201-BS62LV4007
3
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
