BS62UV2006STI-85 参数 Datasheet PDF下载

BSI

DC ELECTRICAL CHARACTERISTICS

( TA = -40

o

C to + 85

o

C )

PARAMETER

NAME

V

IL

V

IH

I

IL

I

LO

V

OL

V

OH

I

CC

I

CCSB

BS62UV2006

TEST CONDITIONS

Vcc=2.0V

Vcc=3.0V

Vcc=2.0V

Vcc=3.0V

PARAMETER

Guaranteed Input Low

(2)

Voltage

Guaranteed Input High

(2)

Voltage

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Operating Power Supply

Current

Standby Current-TTL

MIN.

-0.3

(5)

TYP.

(1)

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.20

0.30

MAX.

0.6

0.8

Vcc+0.3

1

1

0.2

0.4

--

--

10

13

0.1

0.5

3.0

5.0

UNITS

V

V

uA

uA

V

V

mA

mA

Vcc = Max, V

IN

= 0V to Vcc

Vcc = Max, CE1 = V

IH

or CE2=V

IL

or OE = V

IH

, V

I/O

= 0V to Vcc

Vcc

Vcc

Vcc

Vcc

=

=

=

=

Max, I

OL

= 0.1mA

Max, I

OL

= 2.0mA

Min, I

OH

= -0.1mA

Min, I

OH

= -1.0mA

Vcc=2.0V

Vcc=3.0V

Vcc=2.0V

Vcc=3.0V

Vcc=2.0V

Vcc=3.0V

Vcc=2.0V

Vcc=3.0V

Vcc=2.0V

1.4

2.0

--

--

--

--

V

cc

-0.2

2.4

--

--

--

--

--

--

Vcc = Max, CE1= V

IL

, CE2=V

IH

(3)

I

DQ

= 0mA, F = Fmax

Vcc = Max, CE1 = V

IH

or

CE2=V

IL

I

DQ

= 0mA

Vcc = Max, CE1≧Vcc-0.2V or

CE2≦0.2V ;V

IN

≧

Vcc - 0.2V or

V

IN

≦0.2V

I

CCSB1

(4)

Standby Current-CMOS

Vcc=3.0V

uA

1. Typical characteristics are at TA = 25

o

C.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC

. 4. I

ccs

B1

is 2.0uA/3.0uA at Vcc=2.0V/3.0V and T

A

=70

o

C. 5. V

IL

= -1.5V for pulse width less than 30ns.

DATA RETENTION CHARACTERISTICS

( TA = -40

o

C to + 85

o

C )

SYMBOL

V

DR

I

CCDR

(3)

t

CDR

t

R

PARAMETER

Vcc for Data Retention

Data Retention Current

Chip Deselect to Data

Retention Time

Operation Recovery Time

TEST CONDITIONS

CE1

≧

Vcc - 0.2V or CE2

≦

0.2V,

V

IN

≧

Vcc - 0.2V or V

IN

≦

0.2V

CE1

≧

Vcc - 0.2V or CE2

≦

0.2V,

V

IN

≧

Vcc - 0.2V or V

IN

≦

0.2V

See Retention Waveform

MIN.

1.0

--

0

T

RC (2)

TYP.

(1)

--

0.1

--

--

MAX.

--

1.0

--

--

UNITS

V

uA

ns

ns

1. Vcc = 1.0V, T

A

= + 25

O

C

2. t

RC

= Read Cycle Time

3. I

cc

DR

is 0.7uA at T

A

=70

o

C.

LOW V

CC

DATA RETENTION WAVEFORM (1)

( CE1 Controlled )

Data Retention Mode

V

DR

≥

1.0V

Vcc

V

IH

Vcc

Vcc

t

CDR

CE1

≥

Vcc - 0.2V

t

R

V

IH

CE1

LOW V

CC

DATA RETENTION WAVEFORM (2)

( CE2 Controlled )

Data Retention Mode

Vcc

Vcc

V

DR

≧

1.0V

Vcc

t

CDR

t

R

CE2

≦

0.2V

CE2

R0201-BS62UV2006

V

IL

V

IL

3

Revision 1.1

Jan.

2004