PRELIMINARY
CM1215
Specifications (cont’d)
NOTE 1
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VP
Operating Supply Voltage (VP-VN)
3.3
5.5
V
IP
Operating Supply Current
(VP-VN) = 3.3V
8
μA
VF
Diode Forward Voltage
Top Diode
IF = 20mA; TA = 25°C
0.6
0.6
0.8
0.8
0.95
0.95
V
V
Bottom Diode
ILEAK
Channel Leakage Current
Channel Input Capacitance
TA = 25°C; VP = 5V,
VN = 0V
±0.1
±1.0
μA
CIN
At 1 MHz, VP = 3.3V,
VN = 0V, VIN = 1.65V;
Note2
1.6
2.0
pF
ΔCIN
Channel I/O to GND Capacitance
Difference
Note 2
0.04
0.13
pF
pF
CMUTUAL
VESD
Mutual Capacitance
(VP-VN) = 3.3V; Note 2
ESD Protection
Notes 2, 3, and 4;
TA = 25°C
Peak Discharge Voltage at any
channel input, in system, contact
discharge per IEC 61000-4-2
standard
±15
kV
VCL
Channel Clamp Voltage
Positive Transients
IPP = 1A, tP = 8/20μS;
TA=25°C; Notes 2
VP+1.5
VN-1.5
V
V
Negative Transients
RDYN
Dynamic Resistance
Positive transients
Negative transients
IPP = 1A, tP = 8/20μS;
TA = 25°C;
Notes 2
0.4
0.4
Ω
Ω
Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.
Note 4: From I/O pins to VP or VN only. VP bypassed to VN with low ESR 0.2μF ceramic capacitor.
© 2005 California Micro Devices Corp. All rights reserved.
4
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Tel: 408.263.3214
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Fax: 408.263.7846
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www.calmicro.com
06/30/05