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CM1231-02SO 参数 Datasheet PDF下载

CM1231-02SO图片预览
型号: CM1231-02SO
PDF下载: 下载PDF文件 查看货源
内容描述: 双通道的PicoGuard XPTM ESD钳位保护阵列 [Two-Channel PicoGuard XPTM ESD Clamp Protection Array]
分类和应用: 二极管电视光电二极管PC局域网
文件页数/大小: 11 页 / 244 K
品牌: CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
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Issue X-1
CM1231
Two-Channel
PicoGuard XP
TM
ESD Clamp Protection Array
Features
Two channels of ESD protection
Exceeds ESD protection to IEC61000-4-2 Level 4:
±12kV
contact discharge (OUT pins)
Two-stage matched clamp architecture
Matching-of-series resistor (R) of ±10mΩ typical
Flow-through routing for high-speed signal integrity
Differential channel input capacitance matching of
0.02pF typical.
Improved powered ASIC latchup protection
Dramatic improvement in ESD protection vs. best
in class single-stage diode arrays
• 40% reduction in peak clamping voltage
• 40% reduction in peak residual current
Withstands over 1000 ESD strikes*
Available in a SOT23-6 package
Product Description
The CM1231 is a member of the XtremeESD
TM
product family and is specifically designed for next
generation deep submicron ASIC protection. These
devices are ideal for protecting systems with high data
and clock rates and for circuits requiring low capacitive
loading such as USB 2.0.
The CM1231 incorporates the PicoGuard XP
TM
dual
stage ESD architecture which offers dramatically
higher system level ESD protection compared with
traditional single clamp designs. In addition, the
CM1231 provides a controlled filter roll-off for even
greater spurious EMI suppression and signal integrity.
The CM1231 protects against ESD pulses up to
±12kV
contact on the “OUT” pins per the IEC 61000-4-2
standard.
The device also features easily routed "pass-through"
differential pinouts in a 6-lead SOT23 package.
Applications
USB devices data port protection
General high-speed data line ESD protection
Electrical Schematic
V
P
V
P
CM1231
Positive Supply Rail
V
CC
A
OUT
A
IN
Circuitry
Under
Protection
Connector
B
OUT
B
IN
V
N
V
N
Ground Rail
*
Standard test condition is IEC61000-4-2 level 4 test circuit with each (A
OUT
/B
OUT
) pin subjected to ±12kV contact discharge for 1000 pulses. Discharges are timed at 1 second intervals and all 1000 strikes are completed in one
continuous test run.
© 2007 California Micro Devices Corp. All rights reserved.
12/17/07
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
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