PRELIMINARY DATA SHEET
NEC's NPN SiGe
NESG2021M16
HIGH FREQUENCY TRANSISTOR
FEATURES
•
•
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
•
•
DESCRIPTION
NEC's NESG2021M16 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
G
a
NF
G
a
RF
MSG
|S
21E
|
P
1dB
OIP
3
f
T
C
re
I
CBO
I
EBO
h
FE
Notes:
1. MSG = S
21
S
12
2. Collector to base capacitance when the emitter grounded.
3. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
DC
2
NESG2021M16
M16
UNITS
dB
dB
dB
dB
dB
dB
dBm
15.0
20.0
17.0
MIN
TYP
1.3
10.0
0.9
18.0
22.5
19.0
9
17
20
25
0.1
0.2
100
100
130
190
260
1.2
MAX
PARAMETERS AND CONDITIONS
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 3 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Output Power at 1dB Compression Point at
V
CE
= 3 V, I
CQ
= 12 mA, f = 2 GHz
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 2 V, I
C
= 5 mA
3
Output 3rd Order Intercept Point at V
CE
= 3 V, I
CQ
= 12 mA, f = 2 GHz dBm
GHz
pF
nA
nA
California Eastern Laboratories
CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
