CALIFORNIA MICRO DEVICES
PAC DN002
Applications
Parallel printer port protection
ESD protection for sensitive
electronic equipment
Drop-in replacement for PDN 002
17 CHANNEL ESD PROTECTION ARRAY
Features
17-channel ESD protection
8kV contact discharge ESD protection per
IEC 61000-4-2
15kV ESD protection (HBM)
Low loading capacitance, 5.5pF typ.
20-pin SOIC or QSOP package
Product Description
The PAC DN002 is a diode array designed to provide 17 channels of ESD protection for electronic components or
sub-systems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the positive (V
P
) or
negative (V
N
) supply. The PAC DN002 will protect against ESD pulses up to 15KV Human Body Model.
This device is particularly well-suited to provide additional ESD protection for parallel printer ports. It exhibits low
loading capacitance for all signal lines.
ABSOLUTE MAXIMUM RATINGS
SCHEMATIC CONFIGURATION
Diode Forward DC Current
(Note 1)
20mA
°
Storage Temperature
-65 C to 150
°
C
Operating Temperature Range
-20°C to 85°C
DC Voltage at any Channel Input V
N
-0.5V to V
P
+0.5V
Note 1: Only one diode conducting at a time.
STANDARD SPECIFICATIONS
STANDARD SPECIFICATI
Mi
NS
O
n.
Parameter
Para
ati
eter
upply Voltage (V - V )
Min.
Oper
m
ng S
P
N
Op
pp
a
y
ing
r
S
ent
p
(
l
V
Vo
V
age (V
P
2 .0 V, T = 25°C
Su
er
l
t
Cu r
up y
P
-
lt
N
) = 1
- V
N
)
Su
ode
y
F
Cu
w
ent (V
P
tage, I
=
= 20
0 V,
,
T
T =
5°
5°C
0.65 V
Di
ppl
or
rr
ard Vol
- V
N
)
F
1 2 .
mA
=2
2
C
0.65 V
D iode Forward Voltage, I
F
= 20mA, T = 25°C
ESD Protection
ESD Protection
Voltage at any Channel Input
Voltage at any Channel Input
Human Body Model, Method 3015
(See Note 2, 3)
±15KV
Human Body Model, Method 3015
(See Note 2, 3)
±15KV
±8KV
Contact Discharge per IEC 1000-4-2 (
See Note 4)
±8KV
Contact D ischarge per IEC 1000-4-2 (
See Note 4)
Channel Clamp Voltage under ESD test conditions
Channel Clamp Voltage under ESD test conditions
specified above, T = 25°C (
Notes 2,3,4)
specified above, T = 25°C (
Notes 2,3,4)
Positive transients
Positive transients
00
Negative transients
00
Negative transients
Channel Leakage Current, T = 25°C
Channel Leakage Current, T = 25°C
Channel Input Capacitance (Measured @ 1 MHz)
V
P
= 12V, V
N
= 0V, V
IN
= 6 V (
See Note 4)
Package Power Rating
Note 2:
Note 3:
Note 4:
Typ.
Typ.
Max.
M
.0
.
12
ax
V
12 0 V
10
.
µA
10
0
µ
V
1.
A
1.0 V
±0.1 µA
±0.1 µA
5.5pF
V
P
+ 13.0 V
V
P
+ 13.0 V
V
N
- 13.0 V
V
N
- 13.0 V
±1.0 µA
±1.0 µA
12pF
1.00W
From I/O pins to V
P
or V
N
only. V
P
bypassed to V
N
with 0.2
µ
F ceramic capacitor.
Human Body Model per MIL-STD-883, Method 3015, C
Discharge
=100pF, R
Discharge
=1.5K
Ω
, V
P
=12V, V
N
=GND.
This parameter is guaranteed by characterization.
©1999 California Micro Devices Corp. All rights reserved. P/Active and PAC are trademarks of California Micro Devices.
11/99
C0270498D
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
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