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PACUSB-D1YB5R 参数 Datasheet PDF下载

PACUSB-D1YB5R图片预览
型号: PACUSB-D1YB5R
PDF下载: 下载PDF文件 查看货源
内容描述: USB下行端口终结者 [USB Downstream Port Terminator]
分类和应用: 数据线路滤波器过滤器LTE
文件页数/大小: 9 页 / 315 K
品牌: CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
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PACUSB-D1/D2/D3  
Specifications (cont’d)  
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)  
SYMBOL PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX UNITS  
R1  
R1  
R1  
Resistance of R1 Resistor  
(PACUSB-D2Y5/Y5R, -D2YB5/YB5R)  
TA = 25°C  
12  
15  
18  
Ω
Resistance of R1 Resistor  
(PACUSB-D3Y5/Y5R, -D3YB5/YB5R)  
TA = 25°C  
TA = 25°C  
TA = 25°C  
17.6  
26.4  
22  
33  
26.4  
39.6  
Ω
Resistance of R1 Resistor  
(PACUSB-D1Y5/Y5R, -D1YB5/YB5R)  
Ω
R2  
Resistance of R2 Resistor  
15  
kΩ  
TCR  
Temperature Coefficient of Resistance Note 1  
+1300  
ppm/  
°C  
C1  
Capacitance of C1 Capacitor  
0 VDC; 30 mVAC; 1MHz; 25°C  
2.5 VDC; 30 mVAC; 1MHz; 25°C  
Matching Tolerance of C1 Capacitors 1MHz; 25°C  
37.6  
25.6  
47  
32  
56.4  
38.4  
+2  
pF  
pF  
%
TOLCM  
ILEAK  
VRB  
Diode Leakage Current to GND  
Diode Reverse Bias Voltage  
Signal Voltage:  
Measured at 3.3 VDC, 25°C  
1
100  
nA  
ILOAD = 10μA; TA = 25°C  
5.5  
V
VSIG  
ILOAD = 10mA; TA = 25°C  
ILOAD = 10mA; TA = 25°C  
Positive Clamp  
Negative Clamp  
5.6  
-0.4  
6.8  
-0.8  
9.0  
-1.5  
V
V
VESD  
In-system ESD Withstand Voltage  
MIL-STD-883D, Method 3015  
(HBM)  
Pins 1, 3; Notes 2,3 and 4  
Pins 4, 5; Notes 2 and 3  
+4  
+20  
kV  
kV  
IEC 61000-4-2 Contact Discharge Pins 4, 5; Notes 2 and 3  
+15  
kV  
V
VCL  
Clamping voltage under ESD  
discharge  
MIL-STD-883D, Method 3015  
+8kV; Notes 2 and 5  
12  
-7  
MIL-STD-883D, Method 3015 -  
8kV; Notes 2 and 5  
V
Note 1: Electrical operating characteristics guaranteed over standard operating conditions unless specified otherwise.  
Note 2: Guaranteed by design and characterization.  
Note 3: ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.  
Note 4: Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards. Thus,  
they do not require the high ESD protection levels provided for pins 4 and 5.  
Note 5: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if  
ESD is applied to pin 6, then the clamping voltage is measured at pin 1).  
© 2004 California Micro Devices Corp. All rights reserved.  
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112  
Tel: 408.263.3214  
Fax: 408.263.7846  
www.calmicro.com  
09/14/04