CORPORATION
N-Channel Enhancement Mode
MOSFET General Purpose
Amplifier/Switch
2N4351
FEATURES
•
Low ON Resistance
•
Low Capacitance
Gain
•
High Gate Breakdown Voltage
High
•
•
Low Threshold Voltage
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . .
±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TO-72
ORDERING INFORMATION
Part
D
C
G
S
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
2N4351
X2N4351
1003
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
BV
DSS
I
GSS
I
DSS
V
GS(th)
I
D(on)
V
DS(on)
r
DS(on)
| y
fs
|
C
rss
C
iss
C
d(sub)
t
d(on)
t
r
t
d(off)
t
f
PARAMETER
Drain-Source Breakdown Voltage
Gate Leakage Current
Zero-Gate-Voltage Drain Current
Gate-Source Threshold Voltage
"ON" Drain Current
Drain-Source "ON" Voltage
Drain-Source Resistance
Forward Transfer Admittance
Reverse Transfer Capacitance (Note 2)
Input Capacitance (Note 2)
Drain-Substrate Capacitance (Note 2)
Turn-On Delay (Note 2)
Rise Time (Note 2)
Turn-Off Delay (Note 2)
Fall Time (Note 2)
1000
1.3
5.0
5.0
45
65
60
100
ns
pF
1
3
1
300
MIN
25
10
10
5
MAX
UNITS
V
pA
nA
V
mA
V
ohms
µS
TEST CONDITIONS
I
D
= 10µA, V
GS
= 0
V
GS
=
±30V,
V
DS
= 0
V
DS
= 10V, V
GS
= 0
V
DS
= 10V, I
D
= 10µA
V
GS
= 10V, V
DS
= 10V
I
D
= 2mA, V
GS
= 10V
V
GS
= 10V, I
D
= 0, f = 1kHz
V
DS
= 10V, I
D
= 2mA, f = 1kHz
V
DS
= 0, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
D(SUB)
= 10V, f = 1MHz
NOTES: 1.
Device must not be tested at
±125V
more than once or longer than 300ms.
2.
For design reference only, not 100% tested.
CALOGIC [ CALOGIC, LLC ]
