2N5114 – 2N5116
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) (Continued)
2N5114
2N5115
2N5116
SYMBOL
PARAMETER
UNITS
TEST CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
V
V
V
V
GS = -0
Drain Current at Zero Gate Voltage
(Note 1)
DS = -18V (2N5114)
DS = -15V (2N5115)
DS = -15V (2N5116)
IDSS
-30
-90
-15
-60
-5
-25
mA
VGS(f)
Forward Gate-Source Voltage
Drain-Source ON Voltage
-1
-1
-1
IG = -1mA, VDS = 0
GS = 0
V
V
ID = -15mA (2N5114)
ID = -7mA (2N5115)
ID = -3mA (2N5116)
VDS(on)
-1.3
-0.8
-0.6
rDS(on)
rds(on)
Ciss
Static Drain-Source ON Resistance
75
75
100
100
150
150
VGS = 0, ID = -1mA
Ω
Small-Signal Drain-Source ON
Resistance
V
GS = 0, ID = 0, f = 1kHz
Common-Source Input Capacitance
(Note 2)
VDS = -15V, VGS = 0,
25
7
25
7
25
7
f = 1mHz
V
V
V
V
DS = 0
pF
GS = 12V (2N5114)
GS = 7V (2N5115)
GS = 5V (2N5116)
Common-Source Reverse Transfer
Capacitance (Note 2)
Crss
f = 1mHz
NOTES 1. Pulse test; duration = 2ms.
2. For design reference only, not 100% tested.
VGG
VDD
TEST CONDITIONS
INPUT
RL
1.2K
10%
2N5114 2N5115 2N5116
0.1µF
90%
RG
VDD
VGG
RL
-10V
20V
-6V
12V
-6V
8V
VIN
VIN
tOFF
td
tr
51Ω
1.2K
7.5K
VDS(ON)
430Ω
100Ω
910Ω
220Ω
-7mA
-7V
2KΩ
390Ω
-3mA
-5V
90%
SAMPLING
SCOPE
RG
10%
51Ω
51Ω
10%
-6V
ID(ON) -15mA
VIN -12V
tr
OUTPUT
0040
SAMPLING SCOPE
RISE TIME 0.4ns
INPUT RESISTANCE 10MΩ
INPUT CAPACITANCE 1.5pF
0050
TYPICAL PERFORMANCE CHARACTERISTICS
Vp vs rDS(ON)
Vp vs IDSS
Vp vs gfs
10.0
9.0
8.0
7.0
6.0
5.0
10.0
9.0
8.0
7.0
6.0
5.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
4.0
3.0
4.0
3.0
VDS= 20V
VDS= 20V
GS= 0
(pulsed)
VDS= 0.1V
VGS= 0
VGS= 0
V
2.0
2.0
2.0
(pulsed)
1.0
0.9
0.8
0.7
0.6
0.5
1.0
0.9
0.8
0.7
0.6
0.5
1.0
0.9
0.8
0.7
0.6
0.5
10
30
100
300
1,000
1
3
10
30
100
1,000
3,000
10,000
30,000
100,000
gfs(µV)
rDS(ON)(ohms)
tDSS (mA)
0060
0070
0080
CALOGIC [ CALOGIC, LLC ]
