欢迎访问ic37.com |
会员登录 免费注册
发布采购

2N5116 参数 Datasheet PDF下载

2N5116图片预览
型号: 2N5116
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道JFET开关 [P-Channel JFET Switch]
分类和应用: 开关
文件页数/大小: 2 页 / 37 K
品牌: CALOGIC [ CALOGIC, LLC ]
 浏览型号2N5116的Datasheet PDF文件第2页  
P-Channel JFET Switch
CORPORATION
2N5114 – 2N5116
GENERAL DESCRIPTION
Ideal for inverting switching or "Virtual Gnd" switching into
inverting input of Op. Amp. No driver is required and
±10VAC
signals can be handled using only +5V logic (TTL or CMOS).
FEATURES
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +200
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . 3mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Low ON Resistance
I
D(off)
<500pA
Switches directly from TTL Logic
PIN CONFIGURATION
ORDERING INFORMATION
TO-18
Part
Package
Temperature Range
-55
o
C to +200
o
C
-55
o
C to +200
o
C
2N5114-16 Hermetic TO-18
X2N5114-16 Sorted Chips in Carriers
D
5508
G,C
S
SWITCHING CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
t
d
t
r
t
off
t
f
PARAMETER
Turn-ON Delay Time
Rise Time (Note 2)
Turn-OFF Delay Time (Note 2)
Fall Time (Note 2)
2N5114
MAX
6
10
6
15
2N5115
MAX
10
20
8
30
2N5116
MAX
12
30
10
50
ns
UNITS
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
BV
GSS
I
GSS
PARAMETER
Gate-Source Breakdown Voltage
Gate Reverse Current
2N5114
MIN
MAX
30
500
1.0
-500
I
D(off)
Drain Cutoff Current
-1.0
Gate-Source Pinch-Off Voltage
5
10
3
-1.0
6
1
-1.0
4
2N5115
MIN
MAX
30
500
1.0
-500
2N5116
MIN
MAX
30
500
1.0
-500
UNITS
V
pA
µA
pA
µA
V
TEST CONDITIONS
I
G
= 1µA, V
DS
= 0
V
GS
= 20V, V
DS
= 0
T
A
150
o
C
V
DS
= -15V
V
GS
= 12V (2N5114)
V
GS
= 7V (2N5115)
V
GS
= 5V (2N5116)
V
DS
= -15V, I
D
= -1nA
V
P