J308 – J310 / SST308 – SST310
CORPORATION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
BV
GSS
I
GSS
V
GS(off)
I
DSS
V
GS(f)
g
fs
g
os
g
fg
g
og
PARAMETER
MIN
Gate-Source Breakdown
Voltage
Gate Reverse Current
Gate-Source
Cutoff Voltage
Saturation Drain Current
(Note 1)
Gate-Source
Forward Voltage
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common-Gate Forward
Transconductance
Common Gate Output
Conductance
13,000
150
8,000 17,000
250
13,000
150
-1.0
12
-25
-1.0
-1.0
-6.5
60
1.0
10,000 17,000
250
12,000
150
-1.0
12
308
TYP
MAX
MIN
-25
-1.0
-1.0
-4.0
30
1.0
8,000
17,000
250
V
DS
= 10V
I
D
= 10mA
(Note 2)
-2.0
24
309
TYP
MAX
MIN
-25
-1.0
-1.0
-6.5
60
1.0
310
TYP
MAX
V
nA
µA
V
mA
V
I
G
= -1µA, V
DS
= 0
V
GS
= -15V,
V
DS
= 0
T
A
= 125
o
UNITS
TEST CONDITIONS
VDS = 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0
V
DS
= 0, I
G
= 1mA
µS
f = 1kHz
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
C
gd
C
gs
e
n
PARAMETER
Gate-Drain Capacitance
Gate-Source Capacitance
Equivalent Short-Circuit
Input Noise Voltage
Common-Source Forward
Transconductance
Common-Gate Input
Conductance
Common-Source Input
Conductance
Common-Source Output
Conductance
Common-Gate Power Gain
at Noise Match
Noise Figure
Common-Gate Power Gain
at Noise Match
Noise Figure
308
1.8
4.3
10
2.5
5.0
309
1.8
4.3
10
2.5
5.0
310
1.8
4.3
2.5
5.0
nV
UNITS
TEST CONDITIONS
V
DS
= 10V,
V
GS
= -10
f = 1MHz
(Note 2)
f = 100Hz
(Note 2)
MIN TYP MAX MIN TYP MAX MIN TYP MAX
pF
V
DS
= 10V,
√
10
⁄
ç4«ónVçXIÇÀçXäBÇÇG‘• QXóHzâÏé
Hzü
I
D
ç
= 10mA
12
14
0.4
0.15
16
1.5
11
2.7
dB
V
DS
= 10V,
I
D
= 10mA
(Note 2)
Re
(Vfs)
Re
(Vfg)
Re
(Vis)
Re
(Vos)
G
pg
NF
G
pg
NF
12
14
0.4
0.15
16
1.5
11
2.7
12
14
0.4
0.15
16
1.5
11
2.7
µS
f = 105MHz
f = 450MHz
NOTES: 1.
Pulse test PW 300µs, duty cycle
≤3%.
2.
For design reference only, not 100% tested.
CALOGIC [ CALOGIC, LLC ]
