N-Channel JFET
Monolithic Dual
CORPORATION
SST5911 / SST5912
FEATURES
DESCRIPTION
The SST5912 is a High Speed N-Channel Monolithic JFET
pair encapsulated in a surface mount plastic SO-8 package.
The device is designed for high gain (typically > 6000
µmhos),
low leakage ( < 1pA typically) and low noise, The SST5912 is
an excellent choice for differential wideband amplifiers,
VHF/UHF amplifiers and test and measurement.
ORDERING INFORMATION
Part
Package
Temperature Range
-55
o
C to +150
o
C
SST5912 Plastic SO-8 Package
•
High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . g
fs
> 6 mS
•
Low Leakage . . . . . . . . . . . . . . . . . . . . . . I
G
< 1pA typical
•
Low Noise Package
•
Surface Mount
•
Differential Wideband Amplifier
•
VHF/UHF Amplifiers
•
Test and Measurement
APPLICATIONS
NOTE: For Sorted Chips in Carriers, See 2N5911 Series
PIN CONFIGURATION
SO-8
TOP VIEW
(1) S1
(2) D1
(3) G1
(4) N/C
N/C (8)
G2 (7)
D2 (6)
S2 (5)
CJ1
PRODUCT MARKING
SST5912
SST5912
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Parameter/Test Condition
Gate-Drain Voltage
Gate-Source Voltage
Forward Gate Current
Power Dissipation (per side)
(total)
Power Derating
(per side)
(total)
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Symbol
V
GD
V
GS
I
G
P
D
Limit
-25
-25
50
300
500
2.4
4
-55 to 150
-65 to 150
300
Unit
V
V
mA
mW
mW
mW/
o
C
mW/
o
C
o
C
o
C
o
C
T
J
T
stg
T
L
CALOGIC [ CALOGIC, LLC ]
