Diode Protected P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier/Switch
3N172 / 3N173
FEATURES
CORPORATION
•
High Input Impedance
•
Diode Protected Gate
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA
Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TO-72
C,B
S
G
D
1503Z
DEVICE SCHEMATIC
1
ORDERING INFORMATION
Part
3N172-73
X3N172-73
2
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
3
4
0200
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
I
GSS
BV
GSS
BV
DSS
BV
SDS
V
GS(th)
V
GS
I
DSS
I
SDS
r
DS(on)
I
D(on)
PARAMETER
Gate Reverse Current
Gate Breakdown Voltage
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Threshold Voltage
Gate Source Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Source Current
Drain Source On Resistance
On Drain Current
-5.0
-40
-40
-40
-2.0
-2.0
-3.0
-5.0
-5.0
-6.5
-0.4
-0.4
250
-30
-5.0
3N172
MIN
MAX
-200
-0.5
-125
-30
-30
-30
-2.0
-2.0
-2.5
-5.0
-5.0
-6.5
-10
-10
350
-30
nA
ohms
mA
V
3N173
MIN
MAX
-500
-1.0
-125
UNITS
pA
µA
I
D
= -10µA
I
D
= -10µA
I
S
= -10µA, V
DB
= 0
V
DS
= V
GS
, I
D
= -10µA
V
DS
= -15V, I
D
= -10µA
V
DS
= -15V, I
D
= -500µA
V
DS
= -15V, V
GS
= 0
V
SD
= -15V, V
DB
= 0, V
GD
= 0
V
GS
= -20V, I
D
= -100µA
V
DS
= -15V, V
GS
= -10V
TEST CONDITIONS
V
GS
= -20V
T
A
= +125
o
C
CALOGIC [ CALOGIC, LLC ]
