3N190 / 3N191
CORPORATION
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
g
fs
Y
os
C
iss
C
rss
C
oss
PARAMETER
Forward Transconductance (Note 3)
Output Admittance
Input Capacitance Output Shorted (Note 5)
Reverse Transfer Capacitance (Note 5)
Output Capacitance Input Shorted (Note 5)
3N190/91
MIN MAX
1500 4000
300
4.5
1.0
3.0
pF
UNITS
µS
V
DS
= -15V, I
D
= -10mA
f = 1MHz
TEST CONDITIONS
f = 1kHz
SWITCHING CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
t
d(on)
t
r
t
off
PARAMETER
Turn On Delay Time
Rise Time
Turn Off Time
MIN
MAX
15
30
50
ns
V
DD
= -15V, I
D
= -10mA, R
G
= R
L
= 1.4kΩ (Note 5)
UNITS
TEST CONDITIONS
MATCHING CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified) 3N188 and 3N190
SYMBOL
Y
fs1
/ Y
fs2
V
GS1-2
∆V
GS1
−2
∆T
∆V
GS1
−2
∆T
NOTES: 1.
2.
3.
4.
5.
PARAMETER
Forward Transconductance Ratio
Gate Source Threshold Voltage Differential
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
Per transistor.
Approximately doubles for every 10
o
C increase in T
A
.
Pulse test duration = 300µs; duty cycle
≤3%.
Measured at end points, T
A
and T
B
.
For design reference only, not 100% tested.
MIN
0.85
MAX
1.0
100
100
100
mV
µV/
o
C
µV/
o
C
UNITS
TEST CONDITIONS
V
DS
= -15V, I
D
= -500µA, f = 1kHz
V
DS
= -15V, I
D
= -500µA
V
DS
= -15V, I
D
= -500µA,
T = -55
o
C to +25
o
C
V
DS
= -15V, I
D
= -500µA
T = +25
o
C to +125
o
C
CALOGIC [ CALOGIC, LLC ]
