CORPORATION
Diode Protected N-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
M116
FEATURES
•
Low I
GSS
•
Integrated Zener Clamp for Gate Protection
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . .
±0.1mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TO-72
C
S
G
D
1003Z
ORDERING INFORMATION
Part
DEVICE SCHEMATIC
1
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +125
o
C
-55
o
C to +125
o
C
M116
XM116
2
3
4
0330
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
r
DS(on)
V
GS(th)
BV
DSS
BV
SDS
BV
GBS
I
D(OFF)
I
S(OFF)
I
GSS
C
gs
C
gd
C
db
C
iss
PARAMETER
Drain Source ON Resistance
Gate Threshold Voltage
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Gate-Body Breakdown Voltage
Drain Cuttoff Current
Source Cutoff Current
Gate-Body Leakage
Gate-Source (Note 1)
Gate-Drain Capacitance (Note 1)
Drain-Body Capacitance (Note 1)
Input Capacitance (Note 1)
1
30
30
30
60
10
10
100
2.5
2.5
7
10
pF
nA
pA
MIN
MAX
100
200
5
V
UNITS
Ω
TEST CONDITIONS
V
GS
= 20V, I
D
= 100µA
V
GS
= 10V, I
D
= 100µA
V
GS
= V
DS
, I
D
= 10µA
I
D
= 1µA, V
GS
= 0
I
S
= 1µA, V
GD
= V
BD
= 0
I
G
= 10µA, V
SB
= V
DB
= 0
V
DS
= 20V, V
GS
= 0
V
SD
= 20V, V
GD
= V
BD
= 0
V
GS
= 20V, V
DS
= 0
V
GB
= V
DB
= V
SB
= 0, f = 1MHz
Body Guarded
V
GB
= 0, V
DB
= 10V, f = 1MHz
V
GB
= 0, V
DB
= 10V, V
BS
= 0, f = 1MHz
NOTE 1:
For design reference only, not 100% tested.
CALOGIC [ CALOGIC, LLC ]
