SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203
CORPORATION
ABSOLUTE MAXIMUM RATING
(T
A
= +25
o
C unless otherwise noted)
PARAMETER
Breakdown
Voltages
V
DS
V
DB
V
GS
V
GB
V
GD
SD200 SD201 SD202 SD203
UNIT
I
D
P
T
P
D
T
j
T
s
Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation (at or below T
C
= +25
o
C) . . . . 1.8 W
Linear Derating Factor . . . . . . . . . . . . . . . . . 18 mW/
o
C
Power Dissipation (at or below T
A
= +25C) . . . 360 mW
Linear Derating Factor . . . . . . . . . . . . . . . . . 3.6 mW/
o
C
Operating Junction
Temperature Range . . . . . . . . . . . . . . -55
o
C to + 125
o
C
Storage Temperature Range . . . . . . . . -65
o
C to +175
o
C
+25
+25
±40
±40
±40
+25
+25
-0.3
+20
-0.3
+20
-0.3
+20
+20
+20
±40
±40
±40
+20
+20
-0.3
+20
-0.3
+20
-0.3
+20
V
V
V
V
V
V
V
V
ELECTRICAL CHARACTERISTICS (T
A
= +25
o
C unless otherwise noted)
200, 201
SYMBOL
PARAMETER
MIN
STATIC
BV
DS
BV
DB
Drain-Source Breakdown Voltage
Drain-Body Breakdown Voltage
Drain-Source
OFF Current
SD200
Gate-Body
Leakage
Current
SD202
SD201
SD203
V
GS(th
)
r
DS(ON)
DYNAMIC
g
fs
c
iss
c
oss
c
rss
G
ps
NF
P
i
Common-Source Forward
Transcondconductance
Common-Source Input Capacitance
Common-Source Output Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source Power Gain
Noise Figure
Intercept Point
8.0
13
14
2.4
1.0
0.2
10
4.5
29
6.0
3.0
1.2
0.3
8.0
17
20
3.0
1.0
0.2
10
dB
4.0
29
5.0
dBm
∆f
= 2 MHz
3.6
1.2
0.3
V
DS
= 15 V
f = 1 GHz
ID = 20 mA
V
SB
= 0
pF
V
GS
= 0
mS
I
D
= 20 mA, V
DS
= 15 V
f = 1 KHz, V
SB
= 0
I
D
= 20 mA
V
DS
= 15 V
f = 1 MHz
V
SB
= 0
Gate Threshold Voltage
Drain-Source ON Resistance
0.1
1.0
40
2.0
70
0.1
1.0
35
1.0
1.0
2.0
50
V
ohms
V
DS
= V
GS
, I
D
= 1µA, V
SB
= 0
V
GS
= 5 V, I
D
= 1 mA, V
SB
= 0
25
25
1.0
1.0
±0.1
±0.1
µA
nA
30
20
20
25
V
V
I
D
= 1.0µA, V
GS
= V
BS
= 0
I
D
= 1.0µA, V
GB
= 0
Source OPEN
V
DS
= 25 V
V
GS
= V
BS
= 0
V
DS
= 20 V
V
GV
=
±40
V
V
DB
= V
SB
= 0
V
GB
= 20 V
TYP
MAX
MIN
TYP
MAX
202, 203
UNIT
TEST CONDITIONS
I
D(OFF)
I
GBS
µA