SD211 / SD213 / SD215
CORPORATION
ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperatue Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
PARAMETER
Drain-to-Source
Source-to-Drain
Drain-to-Body
Source-to-Body
Gate-to-Source
Gate-to-Body
Gate-to-Drain
SD211
+30
+10
+30
+15
-15
+25
-0.3
+25
-30
+25
SD212
+10
+10
+15
+15
-15
+25
-0.3
+25
-15
+25
SD215
+20
+20
+25
+25
-25
+30
-0.3
+30
-25
+30
UNIT
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
DC CHARACTERISTICS
(T
A
= 25
o
C, unless otherwise specified)
SYMBOL
PARAMETER
SD211
SD213
SD215
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BV
DS
BV
SD
BV
DB
BV
SB
Drain-to-Source
Source-to Drain
Drain-to-Body
Source-to-Body
30
10
10
15
15
35
25
10
10
15
15
25
20
20
25
25
25
V
V
GS
= V
BS
= 0V, I
D
= 10µA
V
GS
= V
BS
= -5V, I
S
= 10nA
V
GD
= V
BD
= -5V, I
D
= 10nA
V
GB
= 0V, source OPEN, I
D
= 10nA
V
GB
= 0V, drain OPEN, I
S
= 10µA
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-Source
1
10
1
10
1
I
SD
(OFF)
I
GBS
V
T
Source-to-Drain
Gate
Threshold Voltage
0.5
1.0
50
r
DS
(ON)
Drain-to-Source
Resistance
30
23
19
1
10
1
10
1
10
2.0
70
45
0.1
1.0
50
30
23
19
10
2.0
70
45
0.1
1.0
50
30
23
19
17
10
10
2.0
70
45
Ω
V
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
V
GS
= V
BS
= -5V, V
DS
= +20V
V
GS
= V
BD
= -5V, V
SD
= +10V
V
GS
= V
BD
= -5V, V
SD
= +20V
V
DB
= V
SB
= 0V, V
GS
=
±40V
V
DS
= V
GS
= V
T
, I
S
= 1µA, V
SB
= 0V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +20V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
gfs
PARAMETER
Forward
Transconductance
Gate Node
Drain Node
Source Node
SD211
SD213
SD215
MIN TYP MAX MIN TYP MAX MIN TYP MAX
10
15
10
15
10
15
UNITS
ms
TEST CONDITIONS
V
DS
= 10V, V
SB
= 0V,
I
D
= 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
C
ISS
C
OSS
C
RSS
2.4
1.3
0.3
3.5
1.5
0.5
2.4
1.3
0.3
3.5
1.5
0.5
2.4
1.3
0.3
3.5
1.5
0.5
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
CALOGIC [ CALOGIC, LLC ]
