SD310 / SD312 / SD314
CORPORATION
ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperature Range . . . . . . . . . . . . . . -65
o
to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
PARAMETER
V
DS
V
SD
V
DB
V
SB
V
GS
V
GB
V
GD
Drain-to-source
Source-to-drain*
Drain-to-body
Source-to-body
Gate-to-source
Gate-to-body
Gate-to-drain
SD310 SD312 SD314
+30
+10
+30
+15
±40
±40
±40
+10
+10
+15
+15
±40
±40
±40
+20
+20
+25
+25
±40
±40
±40
UNIT
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
V
dc
DC ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C, unless other specified.)
SYMBOL
PARAMETER
SD310
SD312
SD314
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BV
DS
BV
SD
BV
DB
BV
SB
Drain-to-source
Source-to drain
Drain-to-body
Source-to-body
30
10
10
15
15
35
25
10
10
15
15
25
20
20
25
25
25
V
V
GS
= V
BS
= 0V, I
D
= 10µA
V
GS
= V
BS
= -5V, I
S
= 10nA
V
GD
= V
BD
= -5V, I
D
= 10nA
V
GB
= 0V, source OPEN, I
D
= 10nA
V
GB
= 0V, drain OPEN, I
S
= 10µA
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-source
1
10
1
10
1
I
SD
(OFF)
I
GBS
V
T
Source-to-drain
Gate
Threshold voltage
Drain-to-source
resistance
0.5
1.0
30
r
DS
(ON)
20
15
1
10
1
10
1
0.1
2.0
50
35
25
0.5
1.0
30
20
15
0.1
2.0
50
35
0.5
1.0
30
20
15
10
0.1
2.0
50
35
Ω
V
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
V
GS
= V
BS
= -5V, V
DS
= +20V
V
GS
= V
BD
= -5V, V
SD
= +10V
V
GS
= V
BD
= -5V, V
SD
= +20V
V
DB
= V
SB
= 0V, V
GS
=
±40V
V
DS
= V
GS
= V
T
, I
S
= 1µA, V
SB
= 0V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
Forward
transconductance
SD310
SD312
SD314
UNITS
TEST CONDITIONS
V
DS
= 10V, V
SB
= 0V, I
D
= 20mA,
f = 1kHz
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs
15
20
15
20
15
20
mmhos
SMALL SIGNAL CAPACITANCES (See capacitance model)
C
(GS+GD+GB)
C
(GD+DB)
C
(GS+SB)
C
DG
Gate node
Drain node
Source node
Reverse transfer
2.4
1.3
3.5
0.3
3.7
1.7
4.5
0.7
2.4
1.3
3.5
0.3
3.7
1.7
4.5
0.7
2.4
1.3
3.5
0.3
3.7
1.7
4.5
0.7
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
CALOGIC [ CALOGIC, LLC ]
