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XU440 参数 Datasheet PDF下载

XU440图片预览
型号: XU440
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道JFET单片双 [N-Channel JFET Monolithic Dual]
分类和应用:
文件页数/大小: 2 页 / 29 K
品牌: CALOGIC [ CALOGIC, LLC ]
 浏览型号XU440的Datasheet PDF文件第1页  
U440 / U441
CORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Parameter/Test Condition
Gate-Drain Voltage
Gate-Source Voltage
Gate-Gate Voltage
Forward Gate Current
Power Dissipation (per side)
(total)
Power Derating
(per side)
(total)
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Symbol
V
GD
V
GS
V
GG
I
G
P
D
Limit
-25
-25
±50
50
250
350
2
2.8
-55 to 150
-65 to 200
300
Unit
V
V
V
mA
mW
mW
mW/
o
C
mW/
o
C
o
C
o
C
o
C
T
J
T
stg
T
L
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
STATIC
V
(BR)GSS
V
GS(OFF
)
I
DSS
I
GSS
Gate-Source Breakdown Voltage
Gate-Source Cut off Voltage
Saturation Drain Current
2
Gate Reverse Current
-35
-3.5
15
-1
-2
I
G
V
GS(F)
DYNAMIC
g
fs
g
os
C
iss
C
rss
e
n
MATCHING
| V
GS1
-V
GS2
|
| V
GS1
-V
GS2
|
∆T
I
DSS1
I
DSS2
g
fs1
g
fs2
CMRR
Differential Gate-Source Voltage
Gate-Source Voltage Differential Change with
Temperature
Saturation Drain Current Ratio
Transconductance Ratio
Common Mode Rejection Ratio
6
20
20
0.97
0.97
85
dB
10
20
mV
µV/
C
o
CHARACTERISTCS
TYP
1
U440
MIN
MAX
U441
MIN
MAX
UNIT
TEST CONDITIONS
-25
-1
6
-6
30
-500
-25
-1
6
-6
30
-500
V
mA
pA
nA
I
G
= -1µA, V
DS
= 0V
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0V
V
GS
= -15V, V
DS
= 0V
T
A
= 150
o
C
V
DG
= 10V, I
D
= 5mA
T
A
= 125
o
C
I
G
= 1mA, V
DS
= 0V
Gate Operating Current
Gate-Source Forward Voltage
-1
-0.3
0.7
-500
-500
pA
nA
V
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage
6
70
3
1
4
4.5
9
200
4.5
9
200
mS
µS
pF
V
DG
= 10V, I
D
= 5mA
f = 1kHz
V
DG
= 10V, I
D
= 5mA
f = 1MHz
V
DG
= 10V, I
D
= 5mA
f = 10kHz
nV/ Hz
V
DG
= 10V, I
D
= 5mA
T = -55 to 25
o
C V
DG
=10V,
T = 25 to 125
o
C I
D
= 5mA
V
DS
= 10V, V
GS
= 0V
V
DG
= 10V, I
D
= 5mA
f= 1 kHz
V
DD
= 5 to 10V, I
D
= 5mA
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle
3%.