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CAT25020U 参数 Datasheet PDF下载

CAT25020U图片预览
型号: CAT25020U
PDF下载: 下载PDF文件 查看货源
内容描述: 1K / 2K / 4K SPI串行EEPROM CMOS [1K/2K/4K SPI Serial CMOS EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 11 页 / 75 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT25010/20/40
STATUS REGISTER
The Status Register indicates the status of the device.
The
RDY
(Ready) bit indicates whether the CAT25010/
20/40 is busy with a write operation. When set to 1 a
write cycle is in progress and when set to 0 the device
indicates it is ready. This bit is read only. The WEL (Write
Enable) bit indicates the status of the write enable latch.
When set to 1, the device is in a Write Enable state and
when set to 0 the device is in a Write Disable state. The
WEL bit can only be set by the WREN instruction and can
be reset by the WRDI instruction.
The BP0 and BP1 (Block Protect) bits indicate which
blocks are currently protected. These bits are set by the
user issuing the WRSR instruction. The user is allowed
to protect quarter of the memory, half of the memory or
the entire memory by setting these bits. Once protected,
the user may only read from the protected portion of the
array. These bits are non-volatile.
DEVICE OPERATION
Write Enable and Disable
The CAT25010/20/40 contains a write enable latch. This
latch must be set before any write operation. The device
powers up in a write disable state when V
cc
is applied.
WREN instruction will enable writes (set the latch) to the
device. If
WP
pin is held low, the write enable latch is
reset to the write disabe state, regardless of the WREN
Instruction. WRDI instruction will disable writes (reset
the latch) to the device. Disabling writes will protect the
device against inadvertent writes.
READ Sequence
The part is selected by pulling
CS
low. The 8-bit read
instruction is transmitted to the CAT25010/20/40, followed
by the 8-bit address for CAT25010/20/40 (for the 25040,
bit 3 of the read data instruction contains address A8).
After the correct read instruction and address are sent,
the data stored in the memory at the selected address is
shifted out on the SO pin. The data stored in the memory
at the next address can be read sequentially by continuing
Figure 2. WREN Instruction Timing
CS
SK
SI
0
0
0
0
0
1
1
0
SO
Note: Dashed Line= mode (1, 1) – – – – –
HIGH IMPEDANCE
Figure 3. WRDI Instruction Timing
CS
SK
SI
0
0
0
0
0
1
0
0
SO
Note: Dashed Line= mode (1, 1) – – – – –
HIGH IMPEDANCE
Doc. No. 1006, Rev. L
6