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CAT28C64BG-12T 参数 Datasheet PDF下载

CAT28C64BG-12T图片预览
型号: CAT28C64BG-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 64K位CMOS并行EEPROM [64K-Bit CMOS PARALLEL EEPROM]
分类和应用: 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 13 页 / 415 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT28C64B  
Byte Write  
DEVICE OPERATION  
A write cycle is executed when both CE and WE are low,  
and OE is high. Write cycles can be initiated using either  
WE or CE, with the address input being latched on the  
falling edge of WE or CE, whichever occurs last. Data,  
conversely, is latched on the rising edge of WE or CE,  
whichever occurs first. Once initiated, a byte write cycle  
automatically erases the addressed byte and the new  
data is written within 5 ms.  
Read  
Data stored in the CAT28C64B is transferred to the data  
bus when WE is held high, and both OE and CE are held  
low. The data bus is set to a high impedance state when  
either CE or OE goes high. This 2-line control architec-  
ture can be used to eliminate bus contention in a system  
environment.  
Figure 3. Read Cycle  
t
RC  
ADDRESS  
CE  
t
CE  
t
OE  
OE  
V
IH  
t
WE  
LZ  
t
OHZ  
t
t
HZ  
DATA VALID  
t
OH  
OLZ  
HIGH-Z  
DATA OUT  
DATA VALID  
t
AA  
Figure 4. Byte Write Cycle [WE Controlled]  
t
WC  
ADDRESS  
t
t
AH  
AS  
t
t
CH  
CS  
CE  
OE  
WE  
t
t
t
OEH  
OES  
WP  
t
BLC  
HIGH-Z  
DATA OUT  
DATA IN  
DATA VALID  
DS  
t
t
DH  
Doc. No. 1011, Rev. F  
7