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CAT6218-250TD-GT3 参数 Datasheet PDF下载

CAT6218-250TD-GT3图片预览
型号: CAT6218-250TD-GT3
PDF下载: 下载PDF文件 查看货源
内容描述: 300毫安CMOS LDO稳压器 [300mA CMOS LDO Regulator]
分类和应用: 稳压器调节器光电二极管输出元件
文件页数/大小: 10 页 / 268 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT6218  
PIN DESCRIPTIONS  
BLOCK DIAGRAM  
Pin # Name Function  
1
2
VIN Supply voltage input.  
GND Ground reference.  
Enable input (active high); a 2.5MΩ  
VIN  
VOUT  
V
IN  
LDO  
EN  
V
OUT  
3
EN  
pull-down resistor is provided.  
Optional bypass capacitor connection  
BYP for noise reduction and PSRR  
enhancing.  
Shutdown  
Switch  
4
5
Reference  
BYP  
VOUT LDO Output Voltage.  
GND  
Figure 2. CAT6218 Functional Block Diagram  
PIN FUNCTION  
VIN is the supply pin for the LDO. A small 1μF  
ceramic bypass capacitor is required between the VIN  
pin and ground near the device. When using longer  
connections to the power supply, CIN value can be  
increased without limit. The operating input voltage  
range is from 2.3V to 5.5V.  
The capacitor should be located near the device. ESR  
domain is 5mto 500m. VOUT can deliver a maxi-  
mum guaranteed current of 300mA. For input-to-  
output voltages higher than 1V, a continuous 300mA  
output current might turn-on the thermal protection. A  
250internal shutdown switch discharges the output  
capacitor in the no-load condition.  
EN is the enable control logic (active high) for the regu-  
lator output. It has a 2.5Mpull-down resistor, which  
assures that if EN pin is left open, the circuit is disabled.  
GND is the ground reference for the LDO. The pin  
must be connected to the ground plane on the PCB.  
VOUT is the LDO regulator output. A small 1μF cera-  
mic bypass capacitor is required between the VOUT pin  
and ground for stability. For better transient response,  
its value can be increased to 4.7μF.  
BYP is the reference bypass pin. An optional 0.01μF  
capacitor can be connected between BYP pin and  
GND to reduce the output noise and enhance the  
PSRR at high frequency.  
ABSOLUTE MAXIMUM RATINGS (1)  
Parameter  
Rating  
Unit  
V
VIN  
0 to 6.5  
-0.3 to VIN + 0.3  
+150  
Internally Limited (2)  
VEN, VOUT  
V
Junction Temperature, TJ  
°C  
mW  
°C  
°C  
kV  
Power Dissipation, PD  
Storage Temperature Range, TS  
Lead Temperature (soldering, 5 sec.)  
ESD Rating (Human Body Model)  
-65 to +150  
260  
3
RECOMMENDED OPERATING CONDITIONS (3)  
Parameter  
Range  
Unit  
V
VIN  
2.3 to 5.5  
0 to VIN  
VEN  
V
Junction Temperature Range, TJ  
Package Thermal Resistance (SOT23-5), θJA  
-40 to +125  
235  
°C  
°C/W  
Typical application circuit with external components is shown on page 1.  
Notes:  
(1) Exceeding maximum rating may damage the device  
(2) The maximum allowable power dissipation at any TA (ambient temperature) is PDmax = (TJmax – TA)/θJA. Exceeding the maximum allowable  
power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown.  
(3) The device is not guaranteed to work outside its operating rating.  
Doc. No. MD-10010 Rev. C  
2
© Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice