• 1N4150UR-1 AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/231
• SWITCHING DIODE
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION
1N4150UR-1
1N3600UR
CDLL4150
CDLL3600
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = + 25°C
Derating: 3.1 mA dc/°C Above TEC = + 110°C
Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
Type
V BR
IR = 10
V RWM
I R1
VR = 50 V dc
TA = 25°C
V (pk)
50
50
µA dc
0.1
0.1
1 R2
VR = 50 V dc
TA = 150°C
µA dc
100
100
C
VR = 0; f = 1 Mhz;
ac signals = 50 m V (p-p)
trr
IF = IR = 10 to 100 mAdc
R L = 100 ohms
ns
4
4
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
µA
FIGURE 1
V dc
CDLL3600
CDLL4150,-1
75
75
pF
2.5
2.5
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80; LL34)
FORWARD VOLTAGE LIMITS – ALL TYPES
V F1
Limits
I F = 1 mA dc
V F2
I F = 10 mA dc
V F3
I F = 50 mA dc
(Pulsed)
V dc
0.780
0.860
V F4
I F = 100 mA dc
(Pulsed)
V dc
0.820
0.920
V F5
LEAD FINISH:
Tin / Lead
I F = 200 mA dc
(Pulsed)
V dc
0.870
1.000
V dc
minimum
maximum
0.540
0.620
V dc
0.680
0.740
THERMAL RESISTANCE (ROJEC):
100 °C/W maximum AT L = 0
THERMAL IMPEDANCE: (ZO
JX): 70
˚C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
CDI-DIODE [ COMPENSATED DEUICES INCORPORATED ]
