• AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
1N5194
1N5195
1N5196
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
TYPE
VRM
V RWM
IO
IO
TA = 150°C
mA
50
50
50
I FSM
TP = 1/120 s
TA = 25°C
A
2
2
2
V (pk)
1N5194
1N5195
1N5196
80
180
250
V (pk)
70
180
225
mA
200
200
200
FIGURE 1
TYPE
VF
@100mA
I R1 at V RWM
TA = 25°C
nA dc
25
25
25
I R2 at V RM
TA = 25°C
µA
100
100
100
I R3 at V RWM
TA = 150°C
µA dc
5
5
5
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
250 ˚C/W maximum
THERMAL IMPEDANCE: (ZO
JX): 70
˚C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
ANY.
V dc
1N5194
1N5195
1N5196
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
CDI-DIODE [ COMPENSATED DEUICES INCORPORATED ]
