• AVAILABLE IN
JAN, JANTX
AND
JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
1N5194UR
1N5195UR
1N5196UR
CDLL5194
CDLL5195
CDLL5196
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2mA/°C from 25ºC to 150ºC
1.0mA/°C from 150ºC to 175ºC
Forward Current: 650mA
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
VRM
TYPE
V(pk)
CDLL, 1N5194UR
CDLL, 1N5195UR
CDLL, 1N5196UR
80
180
250
V(pk)
70
180
225
mA
200
200
200
VRWM
IO
IO
TA = +150
°C
mA
50
50
50
I FSM
TP=1/120 S
TA=25ºC
A
2
2
2
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
TYPE
VF
@100mA
V dc
CDLL, 1N5194UR
CDLL, 1N5195UR
CDLL, 1N5196UR
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
IR1 at VRWM
IR2 at VRM
TA=25ºC
IR3 at VRWM
TA = 150
°C
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100 ˚C/W maximum
THERMAL IMPEDANCE: (Z
OJX): 70
˚C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
nA dc
25
25
25
µ
A
100
100
100
µ
A dc
5
5
5
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
CDI-DIODE [ COMPENSATED DEUICES INCORPORATED ]
