SILICON PLANAR ZENER DIODES
1N5223B to 1N5279B
2.7V to 180V
DO- 35
Glass Axial Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
Forward Voltage at IF=200mA
V <1.1
V
F
No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance
Max Zener
Impedance
A & B Suffix only
(Note 2)
Max Reverse Leakage Current
IR at VR
Device
(Note 1)
Nominal
Voltage Current
VZ @ IZT
Test
Max Zener
Voltage
Temp. Coeff.
qVz(Note 3)
IZT
ZZT
@
ZZK @
IZT
IZK=0.25mA
(A&B Suffix only)
V
69
76
84
91
99
106
114
122
129
137
mA
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
a VZ (% /ºC)
0.099
0.099
0.11
V
91
mA
1.4
1.3
1.1
1.0
0.95
0.90
0.85
0.80
0.74
0.68
W
400
500
750
W
1N5270B
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
1N5276B
1N5277B
1N5278B
1N5279B
2300
2600
3000
4000
4500
4500
5000
5500
5500
6000
100
110
120
130
140
150
160
170
180
900
0.11
0.11
0.11
0.11
0.11
0.11
0.11
1100
1300
1500
1700
1900
2200
NOTE 1:
NOTE 2:
The electrical characteristics are measured after allowing the device to stabilize for
20 seconds when mounted with a 9.525 mm (3/8") minimum lead length from the case.
The zener impedance is derived from the 50 Hz AC voltage, which results when AC current
having an RMS value equal to 10% of the DC zener current (IZT or IZK) is superimposed
on IZT or IZK Zener impedance is measured at two points to insure a sharp knee on the
breakdown curve, thereby, eliminating unstable units.
Temperature coefficient (qVz).
NOTE 3:
Test conditions for temperature coefficient are as follows.
I =7.5mA, T =25ºC
a.
ZT
j
T2=125ºC(1N5223A, B thru 1N5242A, B )
I =Rated I , T =25ºC
b.
ZT
ZT
J
T2=125ºC(1N5243A, B thru 1N5279A, B )
Device to be temperature stabilized with current applied prior to reading brekdown voltage
at the specified ambient Rwmerature
1N5223B_5279B Rev_2 080605E
Data Sheet
Page 3 of 5
Continental Device India Limited
CDIL [ Continental Device India Limited ]
