Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL SWITCHING DIODE
1N914WS
SOD-323
PLASTIC PCAKAGE
Marking
1N914WS=WQ with cathode band
Small Signal Diode
ABSOLUTE MAXIMUM RATINGS ( T
a
=25ºC)
DESCRIPTION
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Non Repetitive Peak Forward Surge Current
Pulse width=1s
Pulse width=1µs
µ
Power Dissipation
Junction Temperature
Storage Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
P
tot
T
j
T
stg
SYMBOL
V
RRM
I
F (AV)
I
FSM
0.5
1.0
200
150
- 55 to +150
A
A
mW
ºC
ºC
VALUE
100
200
UNIT
V
mA
R
th (j-a)
312
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
R
I
R
=5µA
Breakdown Voltage
Forward Voltage
Reverse Current
V
F
I
R
I
R
=100µA
I
F
=10mA
V
R
=20V
V
R
=20V, T
j
=150ºC
V
R
=75V
DYNAMIC CHARACTERISTICS
Capacitance
Reverse Recovery Time
C
tot
t
rr
V
R
=0V, f=1MHz
I
F
= I
R
=30mA, R
L
=100Ω,
I
RR
=3.0mA
MIN
75
100
MAX
UNIT
V
V
V
nA
µA
µA
1.0
25
50
5.0
4.0
50
pF
ns
1N914WS Rev170507E
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
