Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC184
BC184B
BC184C
TO-92
Plastic Package
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
CEO
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
VALUE
30
45
6
100
350
2.8
1
8
-55 to +150
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
357
125
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
I
C
=2mA,I
B
=0
V
CEO
30
Collector -Emitter Voltage
V
CBO
I
C
=10µA.I
E
=0
Collector -Base Voltage
45
Emitter-Base Voltage
Collector-Cut off Current
Emitter-Cut off Current
DC Current Gain
BC184
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
V
CE(Sat)
V
BE(Sat)
V
BE(ON)
V
EBO
I
CBO
I
EBO
h
FE
I
E
=100µA, I
C
=0
V
CB
=30V,I
E
=0
V
EB
=4V, I
C
=0
I
C
=10µA,V
CE
=5V
I
C
=2mA,V
CE
=5V
I
C
=100mA*,V
CE
=5V
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5.0mA*
I
C
=100mA,I
B
=5mA*
I
C
=2mA,V
CE
=5V
I
C
=100µA,V
CE
=5V
I
C
=100mA,V
CE
=5V*
100
240
130
6
TYP
MAX
UNITS
V
V
V
0.2
15
15
800
nA
nA
0.07
0.2
0.55
0.62
0.5
0.83
0.25
0.6
1.2
0.7
V
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4
CDIL [ Continental Device India Limited ]
