NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC184
BC184B
BC184C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
DYNAMIC CHARACTERISTICS
Transition Frequency
f
T
I
C
=0.5mA, V
CE
=3V
f=100MHz
I
C
=10mA, V
CE
=5V
f=100MHz
V
CB
=10V, I
C
=0
f=1MHz
V
BE
=0.5V, I
C
=0
f=1MHz
I
C
=0.2mA, V
CE
=5V
Rs=2kW, f=130HZ to
15KHz
I
C
=0.2mA, V
CE
=5V
Rs=2kW, f=1kHZ
F=200Hz
Small Signal Current Gain
BC184
BC184B
BC184C
Noise Figure
*Pulse Condition: =300s, Duty Cycle=2%
NF
I
C
=0.2mA, V
CE
=5V
Rs=2W, f=1kHZ
| h
fe
|
I
C
=2mA, V
CE
=5V
f = 1KHz
MIN
TYP
MAX
UNITS
140
150
280
5
8
2
4
MHz
MHz
pF
pF
dB
Out-Put Capacitance
Input Capacitance
Noise Figure
C
ob
C
ib
NF
2
4
dB
240
240
450
2
900
500
900
4
dB
Continental Device India Limited
Data Sheet
Page 2 of 4