欢迎访问ic37.com |
会员登录 免费注册
发布采购

BCX38C 参数 Datasheet PDF下载

BCX38C图片预览
型号: BCX38C
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅平面外延达林顿晶体管 [NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS]
分类和应用: 晶体晶体管达林顿晶体管PC局域网
文件页数/大小: 3 页 / 95 K
品牌: CDIL [ Continental Device India Limited ]
 浏览型号BCX38C的Datasheet PDF文件第2页浏览型号BCX38C的Datasheet PDF文件第3页  
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
BCX38A
BCX38B
BCX38C
TO-92
Plastic Package
E
BC
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Power Dissipation @ T
a
=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
CM
I
C
P
D
T
j
, T
stg
VALUE
60
80
10
2
800
625
- 55 to +200
UNITS
V
V
V
A
mA
mW
ºC
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
TEST CONDITION
DESCRIPTION
SYMBOL
I
C
=10mA, I
B
=0
V
CEO (sus)
Collector Emitter Sustaining Voltage
V
CBO
I
C
=10µA, I
E
=0
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain
V
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
= 0
V
EB
=8V, I
C
= 0
I
C
=800mA, I
B
=8mA
I
C
=800mA, V
CE
=5V
BCX38A
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
BCX38B
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
BCX38C
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
*Pulsed Conditions: Pulse Width = 300µs, Duty Cycle <2%
µ
MIN
60
80
10
MAX
UNITS
V
V
V
100
100
1.25
1.80
500
1000
2000
4000
5000
10000
nA
nA
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3