BF494 NPN RF Transistor
July 2006
BF494
NPN RF Transistor
tm
TO-92
1. Collector 2. Emitter 3. Base
T
a
= 25°C unless otherwise noted
Absolute Maximum Ratings *
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction Temperature
Storage Temperature Range
Parameter
Value
20
30
5.0
30
150
- 55 ~ 150
Unit
V
V
V
mA
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation, by R
θJA
Derate above 25°C
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
T
C
= 25°C unless otherwise noted
Value
350
2.8
125
357
Unit
mW
mW/°C
°C/W
°C/W
Electrical Characteristics*
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(ON)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Conditions
I
C
= 1.0mA, I
B
= 0
I
C
= 10µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 40V, V
EB
= 0V
V
CE
= 10V, I
C
= 1mA
I
C
= 10mA, I
B
= 5mA
I
C
= 10mA, I
B
= 5mA
V
CE
= 10V, I
C
= 10mA
Min.
20
30
5.0
Max.
Units
V
V
V
10
67
222
0.2
0.92
650
740
nA
V
V
mV
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BF494 Rev. A
CDIL [ Continental Device India Limited ]
